Abstract:This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin-film transistors. Whether for industry or for research, there is a need to investigate the use of thin gate insulators for these devices to overcome leakage current. Our investigations included direct and transfer characteristics in dark and under illumination, ge… Show more
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