Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

Abstract

Herein, metal-oxide-semiconductor fields effect transistors (MOSFET) are fabricated and characterized. p −type germanium dioxide coated onto Au/ n -CdSe substrates and top contacted with carbon point contacts is used to form the MOSFET devices. The structural investigations which were carried out with the help of X-ray diffraction technique revealed large lattice mismatched polycrystalline layers of CdSe and GeO 2 . The design of the energy band diagram has shown the formation of two Schottky arms (Au/n −CdSe, C/GeO 2 ) at the interfaces of the n − CdSe/ p −GeO 2 layers. The capacitance-voltage characteristics which are recorded in the frequency domain of 1.0-50.0 MHz revealed the ability of formation of NMOS and PMOS layers. The signal frequency controlled built in potential is tunable in the range of 2.34 and 5.18 eV. In addition, the conductance and capacitance spectral analyses in the frequency domain of 10-1800 MHz revealed the domination of current conduction by tunneling and correlated barriers hoping below and above 760 MHz, respectively. In addition to its features as MOSFET devices, the Au/CdSe/GeO 2 /C hybrid devices are found to be appropriate for use as microwave cavities.CdSe/GeO 2 , MOSFET, band diagram, microwave cavity.

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“…It tends to remain constant for higher applied signal frequencies. The increase in 𝑉𝑉 𝑏𝑏𝑏𝑏 values that is associated with decrease in free Carrier density values with increasing signal frequency can be assigned to the inability of the free charge carriers to orient with oscillatory incident electric signals [19]. On the other hand, the capacitance and conductance (𝐺𝐺) spectra for the AGSA devices are shown in Fig.…”

Effect of lanthanum substrates on the structural, optical and electrical properties of copper selenide thin films designed for 5G technologies

“…× 100%, between the hexagonal lanthanum substrates and cubic CuSe along the 𝑎 −and 𝑐 −axis are 33.3% and 114.6%, respectively. Large lattice mismatches are mentioned resulting in interfacial stresses and forms three dimensional quantum confinements [7,8]. Three-dimensional quantum confinement is mentioned capable of altering radically the nonlinear optical properties of semiconductors in the transparency regions [9].…”