Optical Dynamics at the Au/ZnPc Interfaces

Abstract

In this work, the optical dynamics and the structural properties of the zinc phthalocyanine which are coated onto 150 nm thick Au substrates are studied by the X-ray diffraction and optical spectrophotometry techniques. The Au/ZnPc interfaces appears to be strongly affected by the large lattice mismatches at the interface. It is observed that the coating ZnPc onto Au substrates increases the light absorbability by 4.7 and 128.2 times in the visible and infrared regions of light, respectively. Au substrates activated the free carrier absorption mechanism in the ZnPc thin films in the infrared range of light. In addition, the transparent Au substrates forced narrowing the energy band gap in both of the Q and B bands. It also increased the dielectric constant value by ~3.5 times in the IR range. The enhancements in the optical properties of ZnPc that resulted from the thin Au substrates make the ZnPc more suitable for optoelectronic, nonlinear optical applications and for electromagnetic energy storage in the infrared range of light.

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

“…Au/ZnPc interfaces are used because they previously showed remarkable effect on the light absorbability of ZnPc in the infrared range of light. An increase in the light absorption by 128.2 times was previously observed at 1.29 eV [8]. This interface seems to be ideal for fabrication of infrared sensors handling multifunctional operations.…”

“…The ASZ device reported here worked in much wider frequency domain (1.0-50 MHz). It is worth noting that (Au, Mn)/ZnPc/Ag simple interfaces did not show possibility of capacitance depletion in any frequency domain [8]. We also turn the attention that our trails to produce ASZ devices onto n-Si wafers through construction of Ag/n-Si/p-ZnPc/Pt without including Au nanosheets did not show any -C V characteristics unless Au nanosheets were inserted between n-Si and p-ZnPc.…”

“…We also turn the attention that our trails to produce ASZ devices onto n-Si wafers through construction of Ag/n-Si/p-ZnPc/Pt without including Au nanosheets did not show any -C V characteristics unless Au nanosheets were inserted between n-Si and p-ZnPc. The enhanced behavior of ZnPc in presence of Au is assigned to the strong orbital overlapping between Au and atomic orbitals of Zn in ZnPc [8].…”

“…This interface seems to be ideal for fabrication of infrared sensors handling multifunctional operations. Previously we have shown that the organic ZnPC compound exhibit two strong absorption regions resulting from electronic transitions within two energy band gap values of 3.10 eV and 1.65 eV corresponding to B and Q bands [8]. Electronic transitions responsive to IR radiation should be dominant within the smaller band gap (…”

“…Deposition of ZnPc layers onto MoO 3 allowed multifunctionality of the devices and make it suitable for IR and microwave sensing [7]. In addition forming of ZnPc films onto Au substrates enhanced the light absorption by 4.7 and 128.2 times in the visible and infrared regions of light, respectively [8]. The formation of Au/ZnPc layers with the enhanced optoelectronic features motivated us to produce more functional ZnPc devices.…”