Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

Martínez-Ara, Luis Arturo; Aguilar‐Hernández, J.; Sastré-Hernández, J.; Hernández-Hernández, Luis Alberto; Hernández-Pérez, M.A.; Maldonado-Altamirano, Patricia; Mendoza-Pérez, R.; Contreras‐Puente, G.

doi:10.1590/1980-5373-mr-2018-0263

Cited by 7 publications

(6 citation statements)

References 27 publications

(30 reference statements)

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“…102) planes of GaN, respectively [34,[60][61][62]. A small peak at 40.20 • corresponds to β-Ga 2 O 3 (402) and is consistent with the XPS analysis [63]. Based on the absence of other GaN peaks and the relative intensity of the (002) to the (102), we have concluded the preferred growth is in the [0001] direction.…”

Section: Resultssupporting

confidence: 84%

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

et al. 2020

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Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-ray diffraction (HRXRD), and atomic force microscopy (AFM). Scanning and transmission electron microscopy of coated silica nanosprings were compared with corresponding data for the GaN thin films. As grown, GaN on NS is conformal and amorphous. Upon introducing buffer layers of Al2O3 or AlN or combinations thereof, GaN is nanocrystalline with an average crystallite size of 11.5 ± 0.5 nm. The electrical properties of the GaN coated NS depends on whether or not a buffer layer is present and the choice of the buffer layer. In addition, the IV curves of GaN coated NS and the thin films (TF) with corresponding buffer layers, or lack thereof, show similar characteristic features, which supports the conclusion that atomic layer deposition (ALD) of GaN thin films with and without buffer layers translates to 1D nanostructures.

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Section: Resultssupporting

confidence: 84%

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

et al. 2020

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“…Morphology of the surface for GaN thin films is shown in Fig. 3, it can be observed that the grains are found to be with be a mixture of small and large structures, high density of nanostructured GaN was created as shown in Fig 3 . From FESEM image which can be observed a cauliflower-like morphology, this result is agreement with [15], and good agreement with GaN nano thin film prepared via Plasma Enhanced-CVD by M. Gholampour et al [16].…”

Section: Fesem Analysessupporting

confidence: 88%

Synthesis Gallium Nitride Thin Films by Pulsed Laser Deposition as Ammonia (Nh3) Gas Sensor

SLAIBY¹,

RAMIZY²

2020

J. Optoelectron. Biomed. M.

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GaN thin films were deposited on silicon substrate (Si) by pulse laser deposition in a nitrogen atmosphere to use as a gas sensor for detection Ammonia (NH3) gas. Surface morphology of gallium nitride nano thin films were characterized by atomic force microscopy (AFM). The film appears homogenous and the distribution and grain shapes is nearly uniform. High density of nanostructure GaN was created as shown in field emission scan electron microscopy (FESEM) image. XRD measurement showed that GaN have a hexagonal structure. The elemental composition of materials was identified by use of Energy Dispersive X- Ray Analysis (EDX). The average concentration of nitrogen according to EDX analysis for the samples are increase with increasing number of laser pulses. Optical measurements were performed to measure the band gap by UV-visible spectroscopy. The gas sensitivity for NH3 gas were measured for fabricated gas sensor device as a function of concentration.

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“…In addition, XRD peaks at 2θ angles of the 32.5 • and 36.9 • , corresponding to typical hexagonal wurtzite GaN of (100), (101) lattice planes, respectively, according to JCPDS card No.65-3410. The 2θ angle discrepancy of the XRD (100), and (101) peaks presented a small shift compared with the theoretical values, which indicated the tensile stress caused by the lattice mismatch between the GaN film and the glass substrate [22,23].…”

Section: Resultsmentioning

confidence: 76%

“…The XRD image of the GaN films shown in Figure 1a,b illustrates the XRD patterns of the ZnO buffer layer and GaN films, respectively, grown at various pulsed DC sputtering powers from 75 to 125 W. The ZnO buffer layer was grown using an RF magnetron sputtering power of 150 W. The peak was along the c-axis (002) hexagonal wurtzite structure-with the predominant XRD peak being observed at a 2θ angle of approximately 34.4 • -and had a narrow full width at half maximum (FWHM) value of 0.542 • , indicating the superior quality of the ZnO buffer layer grown on the glass substrate. angle discrepancy of the XRD (100), and (101) peaks presented a small shift compared with the theoretical values, which indicated the tensile stress caused by the lattice mismatch between the GaN film and the glass substrate [22,23]. The XRD FWHM values also decreased significantly from 0.515° to 0.417° as the sputtering deposition power decreased from 125 to 75 W. The GaN film deposited at the low sputtering power of 75 W displayed superior XRD intensity with a narrow FWHM value of 0.417°.…”

Section: Resultsmentioning

confidence: 79%

Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique

2019

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We deposited 300-nm-thick GaN films on an amorphous glass substrate at a substrate temperature of 300 °C by using pulsed direct current (DC) sputtering. A ZnO buffer layer was utilized to improve the crystalline quality of the GaN films. Scanning electron microscopy results showed that the GaN thin films were grown along the c-axis and possessed a columnar structure. Atomic force microscopy results revealed that the GaN film deposited at a sputtering power of 75 W had the maximum grain size (24.1 nm). Room-temperature photoluminescence measurement of the GaN films indicated an ultraviolet near-band-edge emission at 365 nm and a Zn impurity energy transition level at 430 nm. In addition, X-ray diffraction conducted on the GaN films revealed a predominant (002) hexagonal wurtzite structure. The GaN film deposited at the sputtering power of 75 W demonstrated a high optical transmittance level of 88.5% in the wavelength range of 400–1100 nm. The material characteristics of the GaN films and ZnO buffer layer were studied using cross-sectional high-resolution transmission electron microscopy. The deposition of GaN films by using pulsed DC magnetron sputtering can result in high material quality and has high potential for realizing GaN-related optoelectronic devices on glass substrates.

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Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition

Cited by 7 publications

References 27 publications

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

Synthesis Gallium Nitride Thin Films by Pulsed Laser Deposition as Ammonia (Nh3) Gas Sensor

Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique

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