Energetic and electronic properties in a multilayered ZnO graphene-like nanostructure

Fernandes, Flaviano Williams; Paiva, Vitor Fernando Gigante de; Thim, Gilmar Patrocínio

doi:10.1590/1980-5373-mr-2015-0432

Cited by 6 publications

(3 citation statements)

References 31 publications

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“…Numerous research works carried out on various layered nanosheets of homogeneous and heterosystems [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. It is seen that, the anode performance of multilayer graphene nanosheets up to four layers is investigated for boron-ion battery applications [11].…”

Section: Introductionmentioning

confidence: 99%

“…The ZnO is a wide direct band gap semiconductor and an excellent optoelectronic, piezoelectric and pyroelectric properties make them applicable for the fabrication of UV optical devices, actuators and sensors [27]. The bilayer and trilayer structures of the ZnO sheet were studied by Fernandes et al [16]. With an increase in layers of the ZnO, the band gap of the heterostructure decreases from 1.61 to 1.22 eV.…”

Section: Introductionmentioning

confidence: 99%

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Electronic, transport and optical properties of ZnO/GaN heterostructures: first-principles study

Wakhare¹,

Deshpande²

2023

J. Phys. D: Appl. Phys.

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The electronic, transport, and optical properties of the trilayer of ZnO and GaN heterostructures are investigated using density functional study to understand its role in optoelectronic devices. For layered systems, the Zn over N and Ga over O stacking arrangement of ZnO over GaN is most favorable. The calculated formation energies reﬂect the energetically favorable ZnO/GaN heterostructures. The GaN/ZnO/GaN is a more energetically favorable stacking arrangement as compared to ZnO/GaN/ZnO. The band gap of trilayer systems decreases as compared to that of bilayer and monolayer. The ZnO/GaN bilayer and ZnO/GaN/ZnO trilayer show direct band gap characteristics with the value of 1.71 and 1.61 eV, respectively. The GaN/ZnO/GaN shows an indirect band gap of 1.47 eV. The higher recombination rate of ZnO/GaN/ZnO is useful to develop a base for optical emission devices. The transport calculations show that the magnitude of current ﬂowing through the system increases with the layers of heterosystems and is speciﬁcally higher for GaN/ZnO/GaN heterostructure. The enhanced channel conductance and higher mobility of GaN/ZnO/GaN heterostructure are crucial for the development of high mobility transistors. The improved absorption energy and dielectric properties are observed for trilayer systems as compared to that of the bilayer and monolayer and may be useful for optical devices. The higher optical eﬃciency is observed for GaN/ZnO/GaN as compared to ZnO/GaN/ZnO heterostructure system and opens up a way toward optical waveguides and reﬂectors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electronic, transport and optical properties of ZnO/GaN heterostructures: first-principles study

Wakhare¹,

Deshpande²

2023

J. Phys. D: Appl. Phys.

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“…For adsorption, activated carbon is widely used due to its high surface area, as also some nanostructured iron oxides and nanostructured ZnO (Rani et al 2017). Due to their semiconductor and piezoelectric properties, ZnO has also been used in the preparation of optoelectronic devices that have application in the aerospace sector (Fernandes et al 2016;Safyanu et al 2019) This work aims the synthesis of ZnO and the magnetic composite ZnO/ZnFe 2 O 4 by the combustion method using starch as fuel (Argolo et al 2019;Siqueira Junior et al 2019). The obtained materials were evaluated in the adsorption and photodegradation processes of the methylene blue dye, using a low cost commercial visible light source for photocatalytic evaluation.…”

Section: Introductionmentioning

confidence: 99%

Combustion Synthesis of Semiconductor Oxides and Evaluation of Adsorption and Photocatalysis Properties

Ferreira

Rodrigues

Garrido

et al. 2020

J.Aerosp. Technol. Manag.

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Improper disposal of effluent contaminated with organic dyes may cause environmental problems. In this context, the ZnO semiconductor and the ZnO/ZnFe2O4 magnetic composite were prepared by the combustion method. The synthesized materials showed adsorption and photocatalysis properties for elimination of methylene blue dye from aqueous medium. About 88% of the methylene blue was eliminated by ZnO and 63% by the composite. In the photocatalysis process, a low cost visible light source was used. These materials can be regenerated by a photo-Fenton process. Moreover, the ZnO/ZnFe2O4 composite can be separated from the reaction medium by a magnetic field.

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Performance of Dye-Sensitized Solar Cells (DSSCs) Fabricated with Zinc Oxide (ZnO) Nanpowders and Nanorods

Chatterjee

2018

J. of Materi Eng and Perform

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Energetic and electronic properties in a multilayered ZnO graphene-like nanostructure

Cited by 6 publications

References 31 publications

Electronic, transport and optical properties of ZnO/GaN heterostructures: first-principles study

Electronic, transport and optical properties of ZnO/GaN heterostructures: first-principles study

Combustion Synthesis of Semiconductor Oxides and Evaluation of Adsorption and Photocatalysis Properties

Performance of Dye-Sensitized Solar Cells (DSSCs) Fabricated with Zinc Oxide (ZnO) Nanpowders and Nanorods

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