Development of Electrical Conduction with Beryllium Doping of CdO Nanostructure thin Films

Dakhel, A.A.

doi:10.1590/1516-1439.301014

Cited by 13 publications

(4 citation statements)

References 11 publications

(11 reference statements)

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“…It is clear that the value of χ (3) is increased by Ag doping. However, a sharp damping of χ (3) in the violetblue region (< 725 nm) occurred followed by spectral independency. Thus, these samples have the advantage to use as an optical switch.…”

Section: Resultsmentioning

confidence: 98%

“…The third-order nonlinear optical susceptibility χ (3) , calculated from the refractive index data, is given by the relation [27]: where A 0 is a constant and equal to 1.7 × 10 −10 esu. Figure 7 shows the variation of χ (3) with wavelength as well as Ag concentration. It is clear that the value of χ (3) is increased by Ag doping.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 7 shows the variation of χ (3) with wavelength as well as Ag concentration. It is clear that the value of χ (3) is increased by Ag doping. However, a sharp damping of χ (3) in the violetblue region (< 725 nm) occurred followed by spectral independency.…”

Section: Resultsmentioning

confidence: 99%

“…CdO is a familiar n-type semiconductor with band gap energy (2.2-2.7) eV [1][2][3]. It is transparent to electromagnetic radiation in the visible to NIR spectral regions.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Ag incorporation on structural and opto-electric properties of pyrolized CdO thin films

et al. 2018

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We have investigated the structure, morphology and opto-electric properties of CdO and Ag-incorporated CdO thin films prepared by chemical spray pyrolysis (CSP) method. The X-ray diffraction (GIXRD) study confirms that CdO samples are highly polycrystalline with cubic structure. The AFM study shows smooth surfaces both for CdO and Ag-CdO thin films. The direct band gap energy varies from 2.25 to 2.50 eV depending on Ag content in the films. Urbach energy reversal in optical band gap indicates that several localized states are present above Fermi level or near at the conduction band. The optical properties, such as refractive index, optical conductivity and nonlinear optical susceptibility, are found dependent on Ag content. A combined effect on the transport properties has been observed with the incorporation of Ag in CdO. The metal-like electric conduction of CdO film has been removed up to a temperature T c for Ag doping. The n-type carrier concentration of CdO is reduced with increasing Ag content and the concentration is of the order of ~ 10 20 cm −3 .

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…CdO is a familiar n-type semiconductor with band gap energy (2.2-2.7) eV [1][2][3]. It is transparent to electromagnetic radiation in the visible to NIR spectral regions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations