Pulsed bias effect on crystallinity and nano-roughness of Ti6Al4V-N films deposited by grid assisted magnetron sputtering system

Stryhalski, Joel; Fontana, L.C.; Odorczyk, Marcos Fernando; Scholtz, Juliano Sadi; Sagás, Júlio César; Recco, Abel André Cândido

doi:10.1590/1516-1439.271314

Cited by 3 publications

(3 citation statements)

References 21 publications

(23 reference statements)

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“…Such an arrangement improves the plasma stability and allows for operating the system at slightly lower pressure. It shifts the first critical point in the hysteresis curve and allows for better control of the sputter process and film properties 21,20,22,23,24 .…”

Section: Methodsmentioning

confidence: 99%

“…Pulsed bias is suitable for deposition of insulator films by reactive sputtering, thus avoiding the accumulation of static charge on the surface of the dielectric film during the deposition process 18,19 . Previous studies have demonstrated improvement of the crystallinity of Ti x O y and Ti x N y films through the negative pulsed biasing substrate 20 . Thus, in an attempt to produce films with good transmittance and low electrical resistivity, the effect of the Nb-doping and the pulsed bias on the electrical and optical properties of oxygen deficient Ti 2 O 3 thin films, deposited by grid assisted magnetron sputtering (GAMS), was investigated.…”

Section: Introductionmentioning

confidence: 99%

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Nb-doped Ti2O3 Films Deposited Through Grid-Assisted Magnetron Sputtering on Glass Substrate: Electrical and Optical Analysis

et al. 2019

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Niobium doped dititanium trioxide (Ti 2 O 3 :Nb) films were deposited on glass substrates, through grid-assisted magnetron sputtering. The Ti 2 O 3 :Nb films were characterized by X-ray diffraction (XRD), electrical conductivity and optical properties. Film deposition was carried out in two different substrate bias modes: DC and unipolar pulsed. Results show that the negative-pulsed mode improves conductivity and crystallinity. The XRD results show peaks corresponding crystallographic planes of Ti 2 O 3. No niobium oxide Nb x O y peaks were observed, which indicates that niobium oxide if formed, is amorphous, and/or substituted Nb atoms remain in a solid solution within the Ti2O3 structure. It was observed that "as-deposited" Ti 2 O 3 :Nb films (without post annealing) are transparent and electrical conductive, with transmittance that reaches 60% in the visible light wavelength despite the considerable thickness of the film and a miminum resistivity of 2x10-2 Ω.cm which indicates that there is potential for application as Transparent Conductive Oxide (TCO).

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nb-doped Ti2O3 Films Deposited Through Grid-Assisted Magnetron Sputtering on Glass Substrate: Electrical and Optical Analysis

et al. 2019

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“…As demonstrated in the present study and in e.g., Refs. [17][18][19][20][21], the ion bombardment induced by the substrate bias voltage can greatly affect e.g., the crystallinity, preferential growth direction, stress state and density of deposited thin films and NMLs. Therefore, in this work, Ag[Ge]/AlN NMLs were fabricated with and without RF bias.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Interfacial Ge and RF-Bias on the Microstructure and Stress Evolution upon Annealing of Ag/AlN Multilayers

et al. 2018

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The present study addresses the structural stability and mass outflow of Ag 10 nm/Ge 1 nm/AlN 10 nm nanomultilayers (NMLs) during thermal treatments in different atmospheres (Ar and air). The nanomultilayers were obtained by magnetron sputtering under different deposition conditions (with and without the RF (Radio-Frequency)-bias application). The microstructure of the as-deposited and thermally treated NMLs were analyzed by XRD and SEM techniques, deriving morphology, microstructure and internal stress. Bias application during the deposition is found to create highly disordered interfaces and to have a very strong influence on the morphology and structural evolution with temperature of the nano-multilayers. Complete multilayer degradation is observed for the bias sample when annealed in Ar at 700 ∘C, while the periodic multilayer structure is preserved for the non-bias samples. Structural and morphological changes are observed starting from 400 ∘C, accompanied with Ag surface migration. The highest Ag amount on the surface is detected in air atmosphere for bias and non-bias samples annealed at temperatures as high as 700 ∘C. The presence of Ge is found to strongly hinder the Ag surface migration. Ag outflow is measured to take place only through the network of surface cracks in the AlN barrier formed upon heating. The crack formation and Ag migration are discussed together with the stress relaxation. The present study demonstrates the feasibility to tailor the stress state of as-deposited NML structures and observe different structural evolution depending on the initial conditions. This paves the way for advanced experimental strategies to tailor directional mass outflow in nanoconfined filler systems for advanced nano-joining applications.

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Grid-Assisted Co-Sputtering Method: Background, Advancement, and Prospect

Mehr

2021

Plasma Chem Plasma Process

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Pulsed bias effect on crystallinity and nano-roughness of Ti6Al4V-N films deposited by grid assisted magnetron sputtering system

Cited by 3 publications

References 21 publications

Nb-doped Ti2O3 Films Deposited Through Grid-Assisted Magnetron Sputtering on Glass Substrate: Electrical and Optical Analysis

Nb-doped Ti2O3 Films Deposited Through Grid-Assisted Magnetron Sputtering on Glass Substrate: Electrical and Optical Analysis

The Effect of Interfacial Ge and RF-Bias on the Microstructure and Stress Evolution upon Annealing of Ag/AlN Multilayers

Grid-Assisted Co-Sputtering Method: Background, Advancement, and Prospect

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