Doping Graphitic and Carbon Nanotube Structures with Boron and Nitrogen

Stéphan, Odile; Ajayan, Pulickel M.; Colliex, C.; Redlich, Ph.; Lambert, J.M.; Bernier, P.; Lefin, P.

doi:10.1126/science.266.5191.1683

Cited by 764 publications

(428 citation statements)

References 17 publications

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“…The three structures have distinct Raman signatures ( Fig. 1d) [23][24][25] . The high quality of the single-layered chemical vapour deposition (CVD) graphene is confirmed by the peak positions of the G and 2D bands (1,580 and 2,700 cm À 1 ), the near absence of D band 26,27 , the ratio of 2D/G intensity (44.0) and the scanning transmission electron microscopy (STEM) characterizations ( Fig.…”

Section: Resultsmentioning

confidence: 99%

Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

et al. 2014

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Graphene and hexagonal boron nitride are typical conductor and insulator, respectively, while their hybrids hexagonal boron carbonitride are promising as a semiconductor. Here we demonstrate a direct chemical conversion reaction, which systematically converts the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform boron nitride and boron carbonitride structures without disrupting the structural integrity of the original graphene templates. We synthesize high-quality atomic layer films with boron-, nitrogen-and carbon-containing atomic layers with full range of compositions. Using this approach, the electrical resistance, carrier mobilities and bandgaps of these atomic layers can be tuned from conductor to semiconductor to insulator. Combining this technique with lithography, local conversion could be realized at the nanometre scale, enabling the fabrication of in-plane atomic layer structures consisting of graphene, boron nitride and boron carbonitride. This is a step towards scalable synthesis of atomically thin two-dimensional integrated circuits.

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Section: Resultsmentioning

confidence: 99%

Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

et al. 2014

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“…Therefore, in order to use tubes as elements in nano-electronical devices, a controlled way to produce and separate a large quantity of tubes of specific radius and chirality has to be found. Alternatively, doping of tubes by boron and nitrogen [1] may lead to electronic properties that are more controlled by the chemistry (i.e., the amount of doping) than the specific geometry of the tubes. Indeed, theoretical investigations of BCN nanotube heterojunctions have predicted that the characteristics of these junctions are largely independent of geometrical parameters [2].…”

Section: Introductionmentioning

confidence: 99%

Band structure of boron doped carbon nanotubes

Wirtz

Rubio²

2003

AIP Conference Proceedings

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Abstract. We present ab initio and self-consistent tight-binding calculations on the band structure of single wall semiconducting carbon nanotubes with high degrees (up to 25 %) of boron substitution. Besides a lowering of the Fermi energy into the valence band, a regular, periodic distribution of the p-dopants leads to the formation of a dispersive "acceptor"-like band in the band gap of the undoped tube. This comes from the superposition of acceptor levels at the boron atoms with the delocalized carbon π-orbitals. Irregular (random) boron-doping leads to a high concentration of hybrids of acceptor and unoccupied carbon states above the Fermi edge.

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“…11,[14][15][16][17][18] In addition to the studies of pure carbon compounds, different kinds of impurities have been introduced into fullerenes and nanotubes. Substitution of carbon with boron and nitrogen have been carried out, producing boron-, nitrogen-, and boron-nitrogen-doped carbon nanotubes [41][42][43][44][45][46][47][48][49] and totally substituted boron nitride nanotubes (BN-NTs). 46,47,[50][51][52][53][54][55][56][57][58][59][60][61][62] The structure of these new boronnitrogen-containing fullerenes and nanotubes have been studied and compared with that of carbon nanotubes.…”

Section: Introductionmentioning

confidence: 99%

Frequency-Dependent Polarizability of Boron Nitride Nanotubes: A Theoretical Study

et al. 2001

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In the present work, we have calculated the static and frequency-dependent polarizability tensors for a series of single-walled boron nitride nanotubes and compared them with corresponding results for carbon nanotubes. The calculations have been performed by employing a dipole-dipole interaction model based on classical electrostatics and an Unsöld dispersion formula. In comparison, we have carried out ab intio calculations at the SCF level of the static polarizability of the smaller nanotubes with the STO-3G basis set. For the frequencydependent polarizability of C 60 , we found excellent agreement among the most accurate SCF calculations in the literature, the interaction model, and experimental results. In particular, the frequency dependence is modeled accurately indicating that the interaction model is a useful tool for studying the frequency dependence of materials. For the nanotubes, we observe the same trends in the interaction model and in the SCF STO-3G results when the number of atoms is increased. However, the values obtained with the interaction model are about 100% larger than the corresponding SCF STO-3G results, due to the small size of the STO-3G basis set. We also find that the boron nitride nanotubes have smaller magnitudes of the polarizability tensor components than the corresponding components for the carbon nanotubes with the same geometry and number of atoms. Furthermore, we find that the geometry of the tube has a large influence on the anisotropy of the polarizability components, whereas the mean polarizability remains almost unaffected when the geometrical configuration is modified. Finally, we observe a relatively small frequency dependence of the polarizability tensor of BN nanotubes.

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Doping Graphitic and Carbon Nanotube Structures with Boron and Nitrogen

Cited by 764 publications

References 17 publications

Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

Band structure of boron doped carbon nanotubes

Frequency-Dependent Polarizability of Boron Nitride Nanotubes: A Theoretical Study

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