1989
DOI: 10.1103/physrevb.39.4828
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Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange

Abstract: The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel. The eA'ect is much stronger than the usual anisotropic magnetoresistance and further increases in structures with more than two Fe layers. It can be explained in terms of spin-Aip scattering of conduction electrons caused by the antiparallel alignment of the magnetization.

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Cited by 3,826 publications
(1,921 citation statements)
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“…After the discovery of giant magnetoresistance (GMR) by the groups of Fert [1] and Grünberg [2] in 1988, a new field in condensed matter, the magneto-or spinelectronics, evolved which has grown steadily in the last ten years. One of the most interesting problems of this new field is the spin-injection from a ferromagnet into a semiconductor, that would lead to the creation of efficient spin-filters [3], tunnel junctions [4], GMR devices for spin injection [5], etc.…”
Section: Introductionmentioning
confidence: 99%
“…After the discovery of giant magnetoresistance (GMR) by the groups of Fert [1] and Grünberg [2] in 1988, a new field in condensed matter, the magneto-or spinelectronics, evolved which has grown steadily in the last ten years. One of the most interesting problems of this new field is the spin-injection from a ferromagnet into a semiconductor, that would lead to the creation of efficient spin-filters [3], tunnel junctions [4], GMR devices for spin injection [5], etc.…”
Section: Introductionmentioning
confidence: 99%
“…Giant magnetoresistance (GMR) [1,2] and tunnel magnetoresistance (TMR) [3][4][5][6][7][8] effects are representative phenomena utilizing the spin-dependent scattering of carriers.…”
Section: Introductionmentioning
confidence: 99%
“…Cr is known to promote a strong interlayer coupling in magnetic multilayers, such as Fe/Cr/Fe. 4 The onset region of the Cr-wedge on the sample is detected when recording an intensity image with the photon energy set first to the Cr L 3 edge (578.0 eV) and then to the pre-edge energy at 572.0 eV. Pixelwise division of both images reveals the Cr wedge in the field of view as shown in the right side of Fig.…”
mentioning
confidence: 97%