Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

Farmer, Damon B.; Chiu, Hsin-Ying; Lin, Yu-Ming; Jenkins, K.A.; Xia, Fengnian; Avouris, Phaedon

doi:10.1021/nl902788u

Cited by 344 publications

(296 citation statements)

References 24 publications

(54 reference statements)

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“…A 6-nm gate dielectric of HfO 2 is conformally grown by atomic layer deposition (ALD) at 150 °C yielding a dielectric constant of κ ≈ 13. 39 Large, single-crystals of graphene are grown by chemical vapor deposition (CVD) and transferred over the gate using well-established procedures. 30 Graphene is patterned with a second lithography step and reactive ion etching in an oxygen plasma.…”

Section: ρ Of the Substrate As ε = T/(2ρ)mentioning

confidence: 99%

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

et al. 2012

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The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain.In this work, we fabricate graphene field-effect transistors (GFETs) on flexible substrates from graphene grown by chemical vapor deposition (CVD). Our devices demonstrate unity-currentgain frequencies, f T , and unity-power-gain frequencies, f max , up to 10.7 and 3.7 GHz, respectively, with strain limits of 1.75%. These devices represent the only reported technology to achieve gigahertz-frequency power gain at strain levels above 0.5%. As such, they demonstrate the potential of CVD graphene to enable a broad range of flexible electronic technologies which require both high-flexibility and RF operation.

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Section: ρ Of the Substrate As ε = T/(2ρ)mentioning

confidence: 99%

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

et al. 2012

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“…For example, it has been recently shown that electrons in monolayer FeSe can couple strongly with phonons in the adjacent SrTiO 3 substrate, which may play an important role in the anomalously high critical temperature for superconductivity in the system 21,22 . However, the unusual interlayer electron-phonon interactions in the van der Waals heterostructures have been little explored so far, although there have been indications that interlayer interactions between graphene electrons and the substrate phonons is a limiting factor for higher graphene electron mobility at room temperature 23,24 .…”

mentioning

confidence: 99%

“…However, the unusual interlayer electron-phonon interactions in the van der Waals heterostructures have been little explored so far, although there have been indications that interlayer interactions between graphene electrons and the substrate phonons is a limiting factor for higher graphene electron mobility at room temperature 23,24 .…”

mentioning

confidence: 99%

Interlayer electron–phonon coupling in WSe2/hBN heterostructures

et al. 2016

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Engineering layer-layer interactions provides a powerful way to realize novel and designable quantum phenomena in van der Waals heterostructures 1-16 . Interlayer electron-electron interactions, for example, have enabled fascinating physics that is di cult to achieve in a single material, such as the Hofstadter's butterfly in graphene/boron nitride (hBN) heterostructures [5][6][7][8][9][10] . In addition to electron-electron interactions, interlayer electron-phonon interactions allow for further control of the physical properties of van der Waals heterostructures. Here we report an interlayer electron-phonon interaction in WSe 2 /hBN heterostructures, where optically silent hBN phonons emerge in Raman spectra with strong intensities through resonant coupling to WSe 2 electronic transitions. Excitation spectroscopy reveals the double-resonance nature of such enhancement, and identifies the two resonant states to be the A exciton transition of monolayer WSe 2 and a new hybrid state present only in WSe 2 /hBN heterostructures. The observation of an interlayer electron-phonon interaction could open up new ways to engineer electrons and phonons for device applications.Van der Waals heterostructures of atomically thin twodimensional (2D) crystals are a new class of material in which novel quantum phenomena can emerge from layer-layer interactions [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] . For example, electron-electron interactions between adjacent 2D layers can give rise to a variety of fascinating physical behaviours: the interlayer moiré potential between the graphene and hBN layers leads to mini-Dirac cones and the Hofstadter's butterfly pattern in graphene/hBN heterostructures 5-10 ; electronic couplings between MoS 2 and MoS 2 layers lead to a direct-to indirect-bandgap transition in bilayer MoS 2 (refs 11,12); and Coulomb interactions between MoSe 2 and WSe 2 layers lead to interlayer exciton states in MoSe 2 /WSe 2 heterostructures 13,14 . Similar to electron-electron interactions, electron-phonon interactions also play a key role in a wide range of phenomena in condensed matter physics: the electron-phonon coupling sets the intrinsic limit of electron mobility 17 , dominates the ultrafast carrier dynamics 18 , leads to the Peierls instability 19 , and enables the formation of Cooper pairs 20 . Exploiting interactions between electrons in one layered material and phonons in an adjacent material could enable new ways to control electron-phonon coupling and realize novel quantum behaviour that has not previously been possible. For example, it has been recently shown that electrons in monolayer FeSe can couple strongly with phonons in the adjacent SrTiO 3 substrate, which may play an important role in the anomalously high critical temperature for superconductivity in the system 21,22 . However, the unusual interlayer electron-phonon interactions in the van der Waals heterostructures have been little explored so far, although there have been indications that interlayer interactions between graphene ...

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“…Non-covalent functionalization layer (NCFL) can be formed prior to ALD growth via molecules like DNA [62], 3,4,9,10-perylene tetracarboxylic acid (PTCA) [63], and NO 2 shown in Figure 4(b) [64][65][66][67]. Besides molecules, polymer can also play the role of NCFL, such as NFC polymers [54,68,69], and ozone pre-treatment (Figure 4(c)) is proved to work for ALD growth as well [70]. Moreover, directly constructing nucleation layer via oxidation of thin film of evaporated or sputtered Al (several nm), followed by Al 2 O 3 ALD growth, is also a choice to form dielectric on graphene surface [71,72].…”

Section: High-κ Dielectric Growth On Graphenementioning

confidence: 99%

Graphene-based ambipolar electronics for radio frequency applications

2012

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Graphene is considered as a promising material to construct field-effect transistors (FETs) for high frequency electronic applications due to its unique structure and properties, mainly including extremely high carrier mobility and saturation velocity, the ultimate thinnest body and stability. Through continuously scaling down the gate length and optimizing the structure, the cut-off frequency of graphene FET (GFET) was rapidly increased and up to about 300 GHz, and further improvements are also expected. Because of the lack of an intrinsic band gap, the GFETs present typical ambipolar transfer characteristic without off state, which means GFETs are suitable for analog electronics rather than digital applications. Taking advantage of the ambipolar characteristic, GFET is demonstrated as an excellent building block for ambipolar electronic circuits, and has been used in applications such as highperformance frequency doublers, radio frequency mixers, digital modulators, and phase detectors. Owing to the success isolation of single layer graphene by Novoselov et al. [4] in 2004, the obsolete point was broken down and a tremendous research field has been expanded based on the 2D material [5][6][7][8][9][10][11], and even the 2010 Nobel Prize in Physics was awarded jointly to A. K. Geim and K. S. Novoselov "for groundbreaking experiments regarding the two-dimensional material graphene" [12,13]. The special 2D structure of graphene provides a series of unique properties in mechanics, thermology, optics, and electronics [10,11,[14][15][16][17][18][19]. Graphene not only provides an experimental platform for basic physics, such as relativistic quantum mechanics (or quantum electrodynamics), which is due to the *Corresponding authors (email: zyzhang@pku.edu.cn; lmpeng@pku.edu.cn) massless property of the Dirac fermion behaved electrons in graphene [20][21][22], but also manifests promising application potential in numerous application fields, such as analog radio frequency (RF) field-effect transistors (FETs) [10,[23][24][25], flexible transparent electrodes and touch screen [26], photodetection [11,27,28], and spin transport [29,30]. In this review article, we will focus on the graphene based electronics and applications, especially RF performance of graphene and ambipolar electronics.

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Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

Cited by 344 publications

References 24 publications

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

Interlayer electron–phonon coupling in WSe2/hBN heterostructures

Graphene-based ambipolar electronics for radio frequency applications

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