Vacuum Ultraviolet Treatment of Self‐Assembled Monolayers: A Tool for Understanding Growth and Tuning Charge Transport in Organic Field‐Effect Transistors

Prisawong, Pollawat; Zalar, Polona; Reuveny, Amir; Matsuhisa, Naoji; Lee, Wonryung; Yokota, Tomoyuki; Someya, Takao

doi:10.1002/adma.201504724

Cited by 35 publications

(37 citation statements)

References 43 publications

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“…The surface of dielectrics could be modified by SAMs to assist the formation of high‐crystalline films and suppress interfacial trap density . However, for polymer substrates, the surfaces comprising the randomly oriented polymer chains hardly allow for being anchored by any organic functionality, resulting in a great obstacle in fabricating a defect‐ and pinhole‐free surface layer.…”

Section: Optimization Of Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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Many advanced materials have been developed for organic field-effect transistors (OFETs) or thin-film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low-power circuits and integrated sensors are also discussed.

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Section: Optimization Of Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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“…Next, we consider the influence of the total surface energy (γ S ). Some previous reports have shown that the dielectric with lower γ S tends to achieve higher mobility than that with higher γ S . However, Bae's group found the higher mobility on the higher‐γ S dielectric .…”

Section: Resultsmentioning

confidence: 99%

Dielectric Selection for Solution‐Processed High‐Mobility TIPS‐Pentacene Microwire Field‐Effect Transistors

Wang

Zhou

Tong

et al. 2019

Adv Materials Inter

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The dielectric effect on the mobility of the solution‐processed organic field‐effect transistors (OFETs) remains unknown. A major challenge is that most of the solution‐processed OFETs are obtained on hydrophilic dielectrics, while most of the commonly used dielectrics for high‐mobility OFETs are hydrophobic. In this work, by selecting a preferred solvent to ensure the good wettability of 6,13‐bis(triisopropylsilylethynyl)‐pentacene (TIPS‐pentacene) solution on both hydrophobic and hydrophilic dielectrics, the highly ordered TIPS‐pentacene single‐crystal microwire arrays are in situ grown on the hydrophobic and hydrophilic dielectrics via a solution‐processed method, and the dielectric effect on the mobility of the solution‐processed TIPS‐pentacene OFETs is investigated. The highest mobility on the divinyltetramethyldisiloxane‐bis(benzocyclobutene) (BCB)/SiO2 dielectric is ascribed to the matching of both the polar and dispersive components of surface energy between dielectric and semiconductor. This work powerfully confirms the direct effect of the dielectric properties on mobility, and provides a new method to select the optimized dielectric for solution‐processed high‐mobility OFETs.

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“…In addition, it is generally believed that the density and order of the SAM strongly affect the semiconductor nucleation mechanism and grain size. The nucleation has been identified as the most important stage of film growth for controlling the bulk film morphology and is highly dependent on the chemical and topological composition of the substrate [11][12][13]. The growth studies of organic thin film experimentally and theoretically have proven that the grain size and density of grain boundaries directly affect the field-effect mobility.…”

Section: Introductionmentioning

confidence: 99%

Ambient condition bias stress stability of vanadium (IV) oxide phthalocyanine based p-channel organic field-effect transistors

Obaidulla¹,

Singh²,

Mohapatra³

et al. 2017

J. Phys. D: Appl. Phys.

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High bias-stress stability and low threshold voltage (V th) shift under ambient conditions are highly desirable for practical applications of organic field-effect transistors (OFETs). We demonstrate here a 20-fold enhancement in the bias-stress stability for hexamethyledisilazane (HMDS) treated vanadium (IV) oxide phthalocyanine (VOPc) based OFETs as compared to the bare VOPc case under ambient conditions. VOPc based OFETs were fabricated on bare (non treated) SiO 2 and a HMDS monolayer passivated SiO 2 layer, with an operating voltage of 40 V. The devices with top contact gold (Au) electrodes exhibit excellent p-channel behavior with a moderate hole mobility for the HMDS-treated device. It is demonstrated that the time dependent ON-current decay and V th shift can be effectively controlled by using self-assembled monolayers of HMDS on the VOPc layer. For the HMDS-treated case, the bias stress stability study shows the stretched exponential decay of drain current by only ~15% during the longterm operation with constant bias voltage under ambient conditions, while it shows a large decay of >70% for the nontreated devices operated for 1000 s. The corresponding characteric decay time constant (τ) is 10 4 s for the HMDS treated case, while that of the the non-treated SiO 2 case is only ~480 s under ambient conditions. The inferior performance of the device with bare SiO 2 is traced to the charge trapping at the voids in the inter-grain region of the films, while it is almost negligible for the HMDS-treated case, as confirmed from the AFM and XRD analyses. It is believed that HMDS treatment provides an excellent interface with a low density of traps and passivates the dangling bonds, which improve the charge transport characteristics. Also, the surface morphology of the VOPc film clearly influences the device performance. Thus, the HMDS treatment provides a very attractive approach for attaining long-term air stability and a low V th shift for the VOPc based OFET devices.

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Vacuum Ultraviolet Treatment of Self‐Assembled Monolayers: A Tool for Understanding Growth and Tuning Charge Transport in Organic Field‐Effect Transistors

Cited by 35 publications

References 43 publications

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Dielectric Selection for Solution‐Processed High‐Mobility TIPS‐Pentacene Microwire Field‐Effect Transistors

Ambient condition bias stress stability of vanadium (IV) oxide phthalocyanine based p-channel organic field-effect transistors

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