10 kV IGCTs

Bernet, Steffen; Carroll, E.; Streit, P.; Apeldoorn, O.; Steimer, P.K.; Tschirley, S.

doi:10.1109/mia.2005.1405827

Cited by 29 publications

(8 citation statements)

References 6 publications

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“…Recently, a 10kV IGCT device has been introduced and its switching capability has been confirmed [10]. In this paper, a 6.5kV/3800A press-pack type IGCT (ABB 5SHY42L6500) is considered for the loss analysis [11].…”

Section: A Press-pack Type Igct For MV Convertersmentioning

confidence: 99%

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Lee¹,

Suh²,

Kang³

2015

Journal of Power Electronics

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This paper provides a loss analysis and comparison of high power semiconductor devices in 5MW Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) Wind Turbine Systems (WTSs). High power semiconductor devices of the press-pack type IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on the back-to-back type 3-level Neutral Point Clamped Voltage Source Converters (3L-NPC VSCs) supplied from a grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through a loss analysis considering both the conduction and switching losses under the operating conditions of 5MW PMSG wind turbines, particularly for application in offshore wind farms. This paper investigates the loss analysis and thermal performance of 5MW 3L-NPC wind power inverters under the operating conditions of various power factors. The loss analysis and thermal analysis are confirmed through PLECS Blockset simulations with Matlab Simulink. The comparison results show that the press-pack type IGCT has the highest efficiency including the snubber loss factor.

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Section: A Press-pack Type Igct For MV Convertersmentioning

confidence: 99%

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Lee¹,

Suh²,

Kang³

2015

Journal of Power Electronics

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“…Thanks to its thyristor design inheritance and low inductive gate turn-off, IGCT has the necessary properties for switching large amounts of electric power in one component. The investigation of the switching behavior of the 68mm, 10kV IGCT at the dc link voltage of 7kV and the switching off current of 1kA indicates a robust device design and a wide safe operating area [10].…”

Section: Characteristic Of Igct Required In High Powermentioning

confidence: 99%

“…Since then, the performance and electrical rating of IGCT has increased dramatically and today 4.5-, 5.5-, 6-, 6.5-, 10-kV IGCTs are available [7], [8]. IGCT-based converters are used in industrial medium-voltage drives (MVDs) as well as railway interties and other energy management systems [9], [10]. The maximum current rating of IGCT is much higher than IGBT and reliable turn-off at 6.5kA versus 2.8kVdc has been reported in the previous literature [8].…”

mentioning

confidence: 99%

Application of IGCT in High Power Rectifiers

Suh

Steimer

2008

2008 IEEE Industry Applications Society Annual Meeting

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This paper investigates the possibility of applying IGCT(Integrated Gate Commutated Thyristor) into high current high power rectifier systems. The optimal power converter topology that fully utilizes the functionality of IGCT is proposed. The proposed power converter consists of a front-end diode rectifier and 3-level step-down dc/dc converter. As compared to 2-level operation, half the input dc voltage and twice the effective switching frequency of 3-level operation can provide a wider operation range of continuous conduction mode resulting in a higher average output current of less ripple size than 2-level case. A laboratory proto-type of 5kA, 3.1MW rectifier has been simulated and tested to confirm the feasibility of IGCT in the proposed power converter topology. The proposed solution generates a relatively smooth output dc current with less contents of high frequency harmonics, thereby avoiding the high frequency harmonic related problems found in IGBT based high current rectifiers. IGCT would play a significant role to improve the cost-effective performance and reliability in low and medium ranged high current high power rectifier systems.

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Section: D Arc Simulationsmentioning

confidence: 99%

A study on medium voltage power conversion system for plasma torch

Suh

Lee

Kheir

et al. 2008

2008 IEEE Power Electronics Specialists Conference

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This paper investigates the medium voltage power conversion system for plasma torch application. The plasma torch rated for 3MW, 2kA and having the physical size of 1m long is selected. The dynamic characteristics of the DC arc in plasma torch are investigated using advanced 3D magneto-hydrodynamics simulation. The parameters of Cassie-Mayr arc model are calculated based on 3D simulation. Two-phase staggered series connected 3-level dc/dc converters is proposed to be a suitable power converter topology. Simulation shows that the ripple of arc current can be maintained within ±11.5% of its rated value, 460A under the existence of load disturbance of ±10% in arc voltage. This power converter topology provides high ignition voltage around 5kV during ignition phase and high arc stability under the existence of intrinsic arc disturbance noise.

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10 kV IGCTs

Cited by 29 publications

References 6 publications

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Application of IGCT in High Power Rectifiers

A study on medium voltage power conversion system for plasma torch

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