10.1007/s11451-008-1006-3

Abstract

The influence of the type and concentration of a dopant (P, Sb, B) on the dynamics of the transformation of a system of structural (intrinsic and radiation-induced) defects of silicon under low-intensity electron irradiation is investigated. A qualitative model is proposed for the formation of the complexes of secondary radiation defects responsible for the maxima of beta-induced softening of silicon single crystals.