Abstract:The microwave-cavity-based technique is used to study the processes of photoionization of electrons from donor levels to the conduction band in semiconductor CdF 2 crystals doped with Y, In, or Ga. The samples were excited by periodic pulses of Nd-laser ( λ = 1.06 µ m, pulse width ~10 ns) in the temperature range 6-77 K. The transient processes were detected in the absorption and dispersion modes related to variation of the imaginary and real parts of the complex permittivity ε 1i ε 2 induced by the light puls… Show more
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