1 W fibre coupled power InGaAsP∕InP 14xx pump laser for Raman amplification

Guermache, Ali; Voiriot, V.; Bouché, Nicolas; Lelarge, F.; Locatelli, D.; Capella, R.-M.; Jacquet, J.

doi:10.1049/el:20046877

Cited by 17 publications

(5 citation statements)

References 3 publications

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“…The high power laser chip is one of the most impotant elements in the Raman pump laser module. In recent years, semiconductor laser chip assembled in pump lasers for Raman amplifiers have adopted an asymmetric waveguide structure [7][8][9][10][11][12] to suppress inter-valence band absorption in the p-InP cladding layer. Acording to adopting an asymmetric waveguide structure [7][8][9][10][11][12], even in a long cavity such as 5 mm, a decrease in slope efficiency is suppressed, resulting in a semiconductor laser chip [10][11][12] operates with low loss and high efficiency.…”

Section: Fig5 Module Configurations Of Raman Pump Laser Modulementioning

confidence: 99%

“…In recent years, semiconductor laser chip assembled in pump lasers for Raman amplifiers have adopted an asymmetric waveguide structure [7][8][9][10][11][12] to suppress inter-valence band absorption in the p-InP cladding layer. Acording to adopting an asymmetric waveguide structure [7][8][9][10][11][12], even in a long cavity such as 5 mm, a decrease in slope efficiency is suppressed, resulting in a semiconductor laser chip [10][11][12] operates with low loss and high efficiency. Especiall, a symetric waveguide structure using a GaInAsP/InP electric field controle layer [10][11][12] has advantages for the laser chip mass production and the laser chipdesign margin.…”

Section: Fig5 Module Configurations Of Raman Pump Laser Modulementioning

confidence: 99%

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1W fiber output operation at 35 degree C of FBG-laser with a GaInAsP laser chip with electric field control layer for fiber Raman amplifier

Yoshida,

Kokawa,

Sakaguchi

et al. 2024

High-Power Diode Laser Technology XXII

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In recent digital coherent transmission systems, it is necessary to improve the received optical signal to noise ratio (OSNR) after fiber transmission in order to achieve higher transmission capacity. Fiber Raman amplifiers (FRAs) are well-known techniques for improving OSNR, especially backward FRAs, which are widely applied in high-capacity digital coherent transmission systems. However, pump lasers having higher output and lower power consumption are required since the Raman gain is small in the FRAs. As a means to realize these characteristis, a laser waveguide structure with a small optical confinement coefficient of the LD chip (low- structure) is very effective. Especially, this makes inter-valence band absorption (IVBA) could be reduced by distributing an electric field toward the substrate side, and internal loss colud be reduced to improve the slope efficiency. We have proposed a novel low- structure consisting of a GaInAsP/InP electric field controlled layer ,which has an advantage of mass production.In this paper, we demonstrate 1W fiber output operation at 35 o C of Fiber-Bragg grating laser modules (FBG-lasers) for Fiber Raman Amplifier using a GaInAsP laser chip with electric field control layer for the first time. In order to realize high power at high temperature operation of 35 o C of laser chip temperature at a case temperature of 70 o C, we optimize the design of a laser chip waveguide keeping a single transverse mode to reduce the series resistance. With an operating current of 2.7 A, FBG-laser exhibits 7.8W of power consumption with 775mW of fiber output.

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Section: Fig5 Module Configurations Of Raman Pump Laser Modulementioning

confidence: 99%

Section: Fig5 Module Configurations Of Raman Pump Laser Modulementioning

confidence: 99%

1W fiber output operation at 35 degree C of FBG-laser with a GaInAsP laser chip with electric field control layer for fiber Raman amplifier

Yoshida,

Kokawa,

Sakaguchi

et al. 2024

High-Power Diode Laser Technology XXII

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“…The structure is an InGaAsP/InP buried ridge waveguide [5]. The Gas Source Molecular Beam Epitaxy grown active layer consist of 6 compressively InGaAsP strained quantum wells separated by four lattice matched barriers.…”

Section: ) Device Fabricationmentioning

confidence: 99%

Investigations of 14xx-nm pump lasers formed by active MMI waveguide

Guermache¹,

Voiriot²,

Jacquet³

2006

SPIE Proceedings

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Recent progress in data transmission systems requires high output power single transverse mode laser diodes for Raman and Erbium-Doped Fiber Amplifier pump sources. Several approaches have shown high output power emission up to 1 Watt for 14xx-nm InGaAsP/InP pump lasers. In these works, the design rules were mainly related to the active volume increase, through large or flared waveguides or through the use of MMI. Such designs lead to electrical and thermal resistance decrease. MMI waveguide have already demonstrated better behavior in comparison with straight active waveguide, but neither experimental comparison nor modelisations between different active MMI structures have been reported. In this work, we report on 2D-BPM simulations and experimental results between different active MMI 1x1 structures for 14xx-nm pump laser. The MMI 1x1 is a large multimode waveguide connected in both sides center by one single transverse mode waveguide. Several parameters such as p order, wavelength emission, MMI width and MMI length have been studied in order to carry out simple design rules for active MMI waveguide based lasers. Moreover, to achieve high level output power, long lasers are necessary. In this case, we also compare long laser, typically 1.2mm, formed by one long MMI waveguide or formed by several short MMI waveguide. Simulations show a better behavior for short MMI length (LMMI<250µm) and small MMI width (WMMI<10µm). As expected, experimental results are in good agreement with simulations, and the output power figure is improved using the long laser formed by several short MMI waveguide

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“…• pumping of solid-state laser [1] • pump sources for raman amplifier [2] • pump sources and seed lasers for fiber laser [3] • second harmonic generation [4] To couple high optical power into a SMF a diode laser with good beam quality and high output power is necessary. So far mainly ridge lasers are used for such applications.…”

Section: Introductionmentioning

confidence: 99%

Single mode fiber coupled tapered laser module with frequency stabilized spectrum

2008

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Laser modules for single mode fiber (SMF) coupling of frequency stabilized diode lasers are so far mainly realized with ridge lasers due to their good beam quality. Tapered lasers are beam sources with a beam quality which is nearly as good as that of a ridge laser but with a higher optical output power. Therefore they have the potential for a higher SMF-coupled power than ridge lasers. It will be shown how the radiation of a tapered laser or amplifier can be frequency stabilized and coupled into a SMF in a compactly build module. To couple a tapered laser different coupling systems, using cylindrical lenses either crossed or in combination with rotational lenses are possible. The advantages, problems and coupling results of those systems will be illustrated. For many applications it is necessary to stabilize the frequency of the laser. This can be achieved for example by a fiber bragg grating, written in the SMF in which the laser is coupled or by a volume holographic grating, applied to a lens in the coupling system. Another possibility is the use of a tapered amplifier, which is stabilized by a fiber bragg grating on the backside of the amplifier

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1 W fibre coupled power InGaAsP∕InP 14xx pump laser for Raman amplification

Cited by 17 publications

References 3 publications

1W fiber output operation at 35 degree C of FBG-laser with a GaInAsP laser chip with electric field control layer for fiber Raman amplifier

1W fiber output operation at 35 degree C of FBG-laser with a GaInAsP laser chip with electric field control layer for fiber Raman amplifier

Investigations of 14xx-nm pump lasers formed by active MMI waveguide

Single mode fiber coupled tapered laser module with frequency stabilized spectrum

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