1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> Noise Characteristics of MoS₂ Thin-Film Transistors: Comparison of Single and Multilayer Structures

Abstract

We report on the transport and low-frequency noise measurements of MoS 2 thin-film transistors (TFTs) with thin (2-3 atomic layers) and thick (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS 2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/ f noise in thick MoS 2 transistors is of the same level as that in graphene. The MoS 2 transistors with the atomically thin channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS 2 transistors with thick channels (15-18 atomic planes) could be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS 2 TFTs.

Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires

“…The devices with a lower resistance tend to have a lower level of the low-frequency noise. As one can see, the noise level, expressed as SI/I 2 , in quasi-1D TaSe3 nanowires is about one order of magnitude lower than that in graphene [29,33]. It is comparable to the lowest reported values for the carbon nanotubes [30][31][32].…”

“…The normalized noise spectral density, SI/I 2 , for TaSe3 nanowires as a function of the resistance is shown in Figure 3 (b). The data points for carbon nanotubes [30][31][32] and graphene [29,33] are presented for comparison. The guide line is the noise amplitude, A=SI/I 2 ×f, which was empirically obtained for the carbon nanotubes [30].…”

Controlled Low‐Frequency Electrical Noise of Monolayer MoS2 with Ohmic Contact and Tunable Carrier Concentration

“…Note that the noise magnitude in our PE-free devices (S I /I D 2 × LW = 4.8 × 10 −7 µm 2 Hz −1 at 10 Hz) is extremely small when compared with other thin MoS 2 transistors (typically in the range of 2 × 10 −6 − 1 × 10 −4 µm 2 Hz −1 at 10 Hz). [20] However, the investigated range of the carrier density (2.8-3.7 × 10 12 cm −2 ) by the variation of V bg is very narrow. The devices were further encapsulated with PE to explore the 1/f noise over a wide range of carrier density (10 11 -10 14 cm −2 ).…”

“…[16] with the ambipolar transport behaviors and many other TMD FETs [17][18][19][20] is further described as fluctuation of the carrier density. Finding a clear picture of the possible factors contributing to the 1/f noise, including the external adsorbates on the devices, [15] the defect states at the metal/TMD contacts, [17] and the trappingdetrapping centers in the substrate near the TMD channel, [18,21] remains a challenging issue because of the lack of Ohmic contacts, ideal material quality, and an effective control of the carrier density.…”

Selective Gas Sensing With $h$ -BN Capped MoS2 Heterostructure Thin-Film Transistors

“…We have recently demonstrated experimentally that the relative resistance change in MoS 2 thin film transistors (TFTs) is better sensing parameter than that in graphene devices [6]. However, the graphene sensors are more suited for using the low-frequency current fluctuations as an additional sensing parameter [2,10].…”