1/f Noise in <font>Ti–Au</font>/n-Type <font>GaAs</font> Schottky Barrier Diodes

Klyuev, Alexey V.; Yakimov, A. V.; Zhukova, I. S.

doi:10.1142/s0219477515500297

Cited by 8 publications

(2 citation statements)

References 43 publications

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“…One model that may explain the high noise correlating to R c is the introduction of thermionic-field emission, due to the formation of the Schottky barrier depletion region, which results in current conduction interacting with trap states [14][15][16][17]. This concept is used in deep-level transient spectroscopy to actually quantify carrier trap density [18,19].…”

Section: N + -Si 1/f Nsdmentioning

confidence: 99%

Three-point probe 1/f noise measurement

Abdula,

Thapaliya

2023

Meas. Sci. Technol.

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The impact of contact resistance (Rc ) on 1/f noise measurements was studied to demonstrate improved accuracy with a novel three-point probe (3pp) method, introduced here, versus the typical two-point probe (2pp) arrangement. It was shown for n+ -Si that using indium to lower Rc decreased noise spectral density (NSD) over 100× for 2pp. In 3pp configuration, NSD was reduced by another ~5× independent of indium use (i.e.- spectra overlapped) suggesting 3pp avoids the impact of Rc on NSD. More heavily doped n++ -Si also showed improvements with 3pp and 2pp/indium versus 2pp/bare. 3pp provided less of a benefit relative to 2pp/indium as Rc was already small due to highly degenerate doping. Measurement drift also improved with 3pp. These results have implications on 1/f measurement accuracy for the broadly used 2pp arrangement. 3pp provides a better noise floor for NSD testing because it is not convoluted with signal from Rc , does not require metallization and has improved simplicity and versatility yet performs equal to four-point probe (4pp) methods.

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Section: N + -Si 1/f Nsdmentioning

confidence: 99%

Three-point probe 1/f noise measurement

Abdula,

Thapaliya

2023

Meas. Sci. Technol.

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“…the devices [15][16][17][18][19][20][21][22][23][24][25], the magnetic defects in spin ice [26][27][28][29] play the positive role of carriers of magnetic charge.…”

Section: J Stat Mech (2019) 094005mentioning

confidence: 99%

Memory effect and generation-recombination noise of magnetic monopoles in spin ice

Klyuev¹,

Ryzhkin²,

Yakimov³

et al. 2019

J. Stat. Mech.

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We theoretically investigate the generation-recombination processes of magnetic monopoles in spin ices. We calculate the spectrum of the relative fluctuations of the numbers of pairs of magnetic monopoles, directly related to that measurable of the magnetic flux noise, using the Langevin approach, previously proposed. Measurements of spectral density of magnetic-flux noise, recently, gave an experimental confirmation of our theoretical results. The agreement with the experimental results is obtained by suggesting a model for the total spectrum of relative fluctuations, which consists in superimposing the spectra of a set of generation-recombination processes, characterized by dierent time constants and a given probability density function.

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Noise spectroscopy of molecular electronic junctions

Kim

Song

2021

Applied Physics Reviews

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Over the past few decades, the field of molecular electronics has greatly benefited from advances in the fundamental understanding of charge transport mechanisms. Molecular junctions represent a field whose potential is realized through detailed studies of charge transport on the nanoscale. Applications of molecular junctions, such as molecular logic circuits, rely on precise mechanistic information as investigative techniques are refined. Current advances have originated from improvements in a variety of characterization techniques, with noise spectroscopy contributing to key studies of transport phenomena. Noise spectroscopy has shown to be useful for probing latent electronic characteristics in molecular junctions, giving insight beyond standard methods of charge transport study. This review presents an in-depth background on fundamental concepts in electronic noise spectroscopy, covering topics such as flicker, generation-recombination, random telegraph signal, and shot noises. Recent advances in noise spectroscopy techniques and their applications to the study of molecular junctions are discussed, highlighting the impact of this technique in the improvement of molecular junction stability and reliability, the study of interference in charge transport, and the emergence of vibrational excitation phenomena. This review provides a comprehensive understanding of noise analyses in the field of molecular junctions and gives insight for further advances in molecular and nanoscale electronics.

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1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes

Cited by 8 publications

References 43 publications

Three-point probe 1/f noise measurement

Three-point probe 1/f noise measurement

Memory effect and generation-recombination noise of magnetic monopoles in spin ice

Noise spectroscopy of molecular electronic junctions

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