1/f Noise in amorphous silicon thin film transistors: effect of scaling down

Rhayem, J.; Rigaud, D.; Valenza, M.; Szydlo, N.; Lebrun, H.

doi:10.1016/s0038-1101(98)00324-4

Cited by 23 publications

(8 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9(b) to decrease with , which was the consequence of the effective depression of the Johnson noise and noise. The noise characteristic was in accordance with the Hooge relation [33] …”

Section: Resultssupporting

confidence: 73%

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Yue

Liu

2005

J. Microelectromech. Syst.

View full text Add to dashboard Cite

In this paper, we report on the first realization and characterization of monolithic uncooled 8 8 infrared sensor arrays, based on amorphous silicon thin-film transistors (a-Si TFT). The a-Si TFT is employed as the active element of the sensor, because it possesses a high temperature coefficient of its drain current of 1.5%-6.5% K 1 at room temperature. The improved porous silicon micromachining techniques described here enable the integration of the a-Si TFT-based sensor array with the MOS readout circuitry. The sacrificial material of porous silicon is prepared in the first step. It is then well protected all the time during the fabrication of MOSFETs and sensors before being released. Optical tests are performed to characterize the sensor. The influences of the gate voltage of a-Si TFT ( ) and the voltage source of the circuitry ( ) on the sensor performance are investigated. The measurement indicates that the sensor has a maximum detectivity of 8.67 10 8 cm Hz 1 2 W 1 at = 15 V, = 12 V and a chopping frequency of 30 Hz. The noise equivalent power (NEP) of the sensor is less than 10 10 W Hz 1 2 , and the noise equivalent temperature difference (NETD) is as low as 67 mK at room temperature, which compares well with the recent results of some uncooled IR sensors developed by other groups. Primary imaging tests indicate that the 8 8 sensor array has potential for high performance imaging applications.[1168]

show abstract

“…9(b) to decrease with , which was the consequence of the effective depression of the Johnson noise and noise. The noise characteristic was in accordance with the Hooge relation [33] …”

Section: Resultssupporting

confidence: 73%

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Yue

Liu

2005

J. Microelectromech. Syst.

View full text Add to dashboard Cite

show abstract

“…A range of values from 10 -6 to 10 -1 have been reported for Hooge's parameter for semiconductor films or layers and for the conducting channels of JFET's and HEMT's at low electric fields [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] . Typical values are 10 -4 which is consistent with the doping levels and number of atoms in these materials, Eqn.…”

Section: Discussionmentioning

confidence: 99%

A theory for Hooge's equation based on temperature fluctuations

Forbes

2003

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…Channel length varies between 3 and 32 µm and the gate width between 16 and 400µm. For these devices previous studies [1] have shown that the diminution of the active film thickness goes hand to hand with the decreasing of the access resistances and their associated parasitic effects. Here we present results related to an aSi film thickness equal to 70nm sufficiently thin to avoid these parasitic effects.…”

Section: /F Noise Has Been Investigated In A-simentioning

confidence: 93%

“…I-V characteristics of TFTs and conduction parameters are obtained with a (HP 4142B) modular DC sources. The conduction parameters have been extracted following the procedure described in [1]. For the various studied gate geometries we obtain:…”

Section: Methodsmentioning

confidence: 99%

1/f Noise Modeling in a-Si TFTs by BSIM Software

Rhayem

Rigaud²,

Contaret³

et al. 2000

30th European Solid-State Device Research Conference

View full text Add to dashboard Cite

1/f noise has been studied in amorphous silicon inverted staggered thin film transistors over different gate geometries. It is shown that the origin of this noise changes when the gate area is scaled down. For large gate geometries mobility fluctuations (Hooge model) prevail whereas for small gate dimensions correlated number-mobility fluctuations (∆N-∆µ model) are involved. In any case, we have used BSIM to obtain 1/f noise modeling. It is pointed out some terms in order to obtain simulation accuracy. Good agreement is observed showing BSIM possibilities to model excess noise in thin film devices.

show abstract

1/f Noise in amorphous silicon thin film transistors: effect of scaling down

Cited by 23 publications

References 8 publications

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

A theory for Hooge's equation based on temperature fluctuations

1/f Noise Modeling in a-Si TFTs by BSIM Software

Contact Info

Product

Resources

About