1993
DOI: 10.1109/68.248415
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1/f noise behavior in semiconductor laser degradation

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Cited by 43 publications
(22 citation statements)
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“…The 1=f noise and g-r noise show the imperfections in materials or devices, which have a close relation with device quality and reliability. The 1=f noise in semiconductor lasers has been studied by many scholars [1][2][3]; while the reports about the g-r noise are less. The g-r noise in devices mostly comes from the deep-level impurities, including chemical impurities and lattice defects.…”
Section: Introductionmentioning
confidence: 98%
“…The 1=f noise and g-r noise show the imperfections in materials or devices, which have a close relation with device quality and reliability. The 1=f noise in semiconductor lasers has been studied by many scholars [1][2][3]; while the reports about the g-r noise are less. The g-r noise in devices mostly comes from the deep-level impurities, including chemical impurities and lattice defects.…”
Section: Introductionmentioning
confidence: 98%
“…The advantages are achieved due to strict injection current and optical field confinement in the active region by the current-blocking layers (Lee et al, 2008;Mito et al, 1982;Nunoya et al, 2000;Yamazaki et al, 1999). But additional etching and currentblocking layers regrowth introduce defects at the interface between the active region and current-blocking layers (Fukuda et al, 1993;Krakowski et al, 1989;Oohashi et al, 1999). Such defects, in principle, can lead to the worse LD operation characteristics and quick degradation.…”
Section: Noise Characteristics and Reliability Of Buried Heterostructmentioning
confidence: 99%
“…Low-frequency 1/f α -type noise is a typical excess noise that is a very sensitive measure of the quality and reliability of optoelectronic devices, as it is related with the defectiveness of the structure of the device (Jones, 2002;Lin Ke et al, 2010;Vandamme, 1994). Measurement of low frequency noise can indicate the presence of intrinsic defects as well as fabrication imperfections, which act as deep traps or recombination centres in semiconductor materials and their structures (Fukuda et al, 1993;Jones, 1994;Palenskis, 1990). This section presents noise characteristic analysis that was performed in order to clear up the origin of laser diode lower quality and degradation, factors that accelerate degradation, to find out noise parameter that could be used for LD quality and reliability prediction.…”
Section: Noise Characteristics and Reliability Of Laser Diodesmentioning
confidence: 99%
“…Introduction: Low-frequency or 1/f noise has been widely observed in many optical devices including laser diodes [1], semiconductor lasers [2][3][4] and also in coherent communications systems [5]. The presence of 1/f noise is described by different factors such as device material characteristics, fluctuations in the number of carriers and also the quantum properties of photons.…”
mentioning
confidence: 99%