1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE

Wu, Ting-Yi; Su, Yan–Kuin; Chuang, Ricky W.; Huang, Chun-Yuan; Wu, Hao; Lin, Yuefeng

doi:10.1016/j.jcrysgro.2012.07.027

Cited by 5 publications

(4 citation statements)

References 17 publications

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“…Films of GaAs 1 À x N x and In y Ga 1 À y As 1 À x N x can also be used as the light-absorbing layer in high-efficiency multi-junction solar cells [16][17][18][19], which have great potential for space applications. However, applications in space need to take into consideration the harsh environment, with high-energy radiation particles that can damage the cells and are known to degrade the physical properties of irradiated semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

Klangtakai

Sanorpim

Wattanawareekul

et al. 2015

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

Klangtakai

Sanorpim

Wattanawareekul

et al. 2015

Journal of Crystal Growth

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“…Experiment has shown that the InGaAsN/GaAs multiple QW‐based GaAs SJ SC increases the I SC , but at the same time also reduces the open circuit voltage. [ 41 ] A three junction InGaP/InGaAs‐GaAsP/Ge multiple QW SC model has shown 32% efficiency under AM0 condition using InGaAs as QW and GaAsP as barrier material. [ 38 ] The use of core shell type nanoparticles as colloidal quantum dot materials and strain‐balanced QWs for InGaP/GaAs DJ SC achieved maximum efficiency of 16.29% and 32.9%, respectively.…”

Section: Introductionmentioning

confidence: 99%

Analytical Model of InP QWs for Efficiency Improvement in GaInP/Si Dual Junction Solar Cell

Verma

Mishra

2022

Physica Status Solidi (a)

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Quantum wells (QWs) are proven to enhance the short circuit current and voltage preservation measures help in efficiency enhancement with little degradation of open circuit voltage . Herein, an integrated GaInP/Si dual junction solar cell is proposed by incorporating the QWs in the top cell and carrier‐selective passivated contact at the bottom cell of the design. The QW increases the photon absorption of sub‐bandgap energies, buffer layer reduces the misfits between the lattice mismatched layers, and passivation mechanism improves the overall efficiency. Increasing the number of QWs increases the depletion width of QW region. This reduces the carrier lifetime () and increases the recombinations in the QW region. It results in the reduction in passivation quality and, therefore, reduces the open circuit voltage (). QW strain balancing and measures to reduce the threading dislocations has been considered. Also, the wide bandgap GaInP tunnel junction along with highly doped GaAs tunnel junction has been analyzed to observe the parasitic effect. The GaInP/Si‐integrated model achieves efficiency of 33.39% when the QWs are incorporated in the top cell. The effect of wide bandgap tunnel junction is also evaluated using GaInP tunnel junction.

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“…In addition, the nitrogen incorporation decreases minority carrier diffusion lengths, which degrades the performance of solar cells. Moreover, these layers are almost exclusively grown by the molecular beam epitaxy (MBE) [4,5], or low pressure metal organic vapour phase epitaxy (LP-MOVPE) [6][7][8][9]. Therefore, the growth of dilute nitrides has been scarcely studied in an atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) [10,11], which is a challenge for growers, but allows the reduction of the production cost of MJSCs based on these metastable compounds.…”

Section: Introductionmentioning

confidence: 99%

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Ściana

Radziewicz

Dawidowski

et al. 2019

J Mater Sci: Mater Electron

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This work presents the epitaxial growth and material properties of InGaAsN epilayers obtained by atmospheric pressure metal organic vapour phase epitaxy. The main goal was to obtain InGaAsN quaternary alloys lattice-matched to GaAs in order to apply them as an intrinsic thick absorber in p-i-n solar cells. It allows improvement of their photovoltaic parameters (e.g. short circuit current, open circuit voltage) by reducing the density of misfit dislocations. To overcome the main difficulties connected with achieving InGaAsN composition with In/N ratio of ~ 3, which guarantees a lattice matching to GaAs, epitaxial processes were carried out with different concentration of gallium source in the gas phase. Diffraction curves, measured using HRXRD, indicated that the main aim of this work was achieved for the gas molar ratio Ga/(Ga + In) = 0.935. The optical quality and surface morphology of the investigated structures examined by PL, CER and AFM methods are also presented and discussed.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE

Cited by 5 publications

References 17 publications

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

Analytical Model of InP QWs for Efficiency Improvement in GaInP/Si Dual Junction Solar Cell

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

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