1-D nanostructures grown on the Si(5 5 12) surface

Baski, A. A.; Saoud, Khaled; Jones, K. M.

doi:10.1016/s0169-4332(01)00412-3

Cited by 76 publications

(37 citation statements)

References 14 publications

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“…At about a coverage of l.5ML, we observe LEEO fractional order spots which correspond to 2x (113) facet shown in Fig. 2(g), which is previously reported to be consisting of 10 nanochains [26]. The analysis of the line scan along [66 5) gives a reciprocal lattice spacing of 4.90 nm-\ which is equivalentto 1.28 nm.…”

Section: Methodssupporting

confidence: 58%

“…The intensity line scan taken along the [66 5] direction shows that the structure consists of 2 x 337 facets as seen in Fig. 6(g) which has been reported for Au and other metals on Si (5 5 12) surface, to be made up of quasi 1D metal nanochain structures [26,31]. The interchain separation of these facets determined by measuring the separation between the LEED spots along the [66 5] direction is 3.2 nm.…”

Section: Methodsmentioning

confidence: 53%

“…As shown in the figure the surface can also be decomposed into different combinations of (225), (337), (112), (113) and (7 7 17). It is also reported that under appropriate kinetic conditions, metal adsorption can lead to the conversion of the (5 5 12) surface into different facets [26].…”

Section: Introductionmentioning

confidence: 99%

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Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

et al. 2010

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Using the morphological differences of low and high index surfaces as templates for metal growth, several low dimensional overlayer structures with novel structural and electronic properties can be formed. We present here a first report on submonolayer adsorption and residual thermal desorption studies of In adatoms on reconstructed high index Si (55 12)-2x1 surface and compare it with the observations on planar Si (111) -7 x 7 surface. The study is done by using in-situ Ultra High Vacuum surface sensitive probes like Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). These conventional wide area techniques provide an understanding of atomistic issues involved in the evolution of the interface. We have observed an anomalous growth mode during adsorption at room temperature (RT) above 2ML, which includes adatom layering and clustering on Si (111) surface. This is also manifested during the desorption experiments on both surfaces, and the subtle differences on the two surfaces are discussed. The observation of LEED pattern during the adsorption process shows formation of different superstructural phases on Si (111 )-7 x 7 surface. On Si (5512) 2 x 1 surface we observe the sequential2x (225), 2x (337) and 2x (113) facet formation during adsorption/desorption, which include quasi 1D-nanowire/chain structures. A combination of lattice strain effects, presence of step-edge barrier and quantum size effects are employed to speculate the differences in adsorption and desorption.

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Section: Methodssupporting

confidence: 58%

Section: Methodsmentioning

confidence: 53%

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Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

et al. 2010

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“…There is a possibility of forming quantum-well structures in metals by controlling this gap as a function of deposited thickness [38]. Extensive STM studies have been performed [39,40] to investigate the growth behavior of noble metals deposited on high-index Si(5512) surface and formation of nanowires. The periodicity (5.4 nm) of these nanowires matches that of the underlying Si surface.…”

Section: Metal Filmsmentioning

confidence: 99%

Morphology of nanostructured materials

Sanyal

Datta

Hazra

2002

Pure and Applied Chemistry

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Here we shall discuss the importance of grazing incidence X-ray scattering techniques in studying morphology of nanostructured materials confined in thin films and multilayers. In these studies, the shapes, sizes, and structures of nanostructured materials and their distribution in composites are investigated. These studies are important for understanding properties that may deviate considerably from the known bulk properties. We shall first outline basics of three X-ray scattering techniques, namely X-ray reflectivity, grazing incidence small-angle X-ray scattering, and grazing incidence diffraction, used for these studies. We shall then demonstrate the utility of these techniques using some known results.

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“…Indeed, recent studies have revealed unidirectional growth of nanowires [2,3] with high aspect ratios and tailored separation distances. Of the high-index surfaces, Si(1 1 4) is stable and planar residing 19.5°from (0 0 1) toward (1 1 1) [4].…”

mentioning

confidence: 99%