[1]Benzothieno[3,2-b][1]benzothiophene-based liquid crystalline organic semiconductor for solution-processed organic thin film transistors

Park, Woobyung; Yun, Chang-Koo; Yun, Seungjae; Lee, Jaejin; Bae, Sangwok; Ho, Dongil; Earmme, Taeshik; Kim, Choongik; Seo, Sang‐Hun

doi:10.1016/j.jiec.2022.07.005

Cited by 10 publications

(5 citation statements)

References 65 publications

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“…Unless otherwise noted, all compounds were purchased from commercial sources and used without further purification. 2-Iodobenzo[b]benzo [4,5] thieno [2,3-d]thiophene [49] and 2-(5-iodothiophen-2-yl)-7-octylbenzo[b]benzo [4,5]thieno [2,3d]thiophene [50] were prepared following synthetic procedures in the literature. Solvents were freshly distilled or dried by passing through an alumina column.…”

Section: Methodsmentioning

confidence: 99%

Characterization of [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives with End-Capping Groups as Solution-Processable Organic Semiconductors for Organic Field-Effect Transistors

et al. 2023

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Solution-processable [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives with various end-capping groups, 2-(phenylethynyl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (Compound 1), 2-octyl-7-(5-(phenylethynyl)thiophen-2-yl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (Compound 2), and triisopropyl((5-(7-octylbenzo[b]benzo[4,5]thieno[2,3-d]thiophen-2-yl)thiophen-2-yl)ethynyl)silane (Compound 3), have been synthesized and characterized as active layers for organic field-effect transistors (OFETs). Thermal, optical, and electrochemical properties of the newly synthesized compounds were characterized using thermogravimetric analysis (TGA), a differential scanning calorimeter (DSC), UV–vis spectroscopy, and cyclic voltammetry (CV). Thin films of each compound were formed using the solution-shearing method and the thin film surface morphology and texture of the corresponding films were characterized using atomic force microscopy (AFM) and θ–2θ X-ray diffraction (XRD). All semiconductors exhibited p-channel characteristics in ambient and Compound 1 showed the highest electrical performance with a carrier mobility of ~0.03 cm2/Vs and current on/off ratio of ~106.

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Section: Methodsmentioning

confidence: 99%

Characterization of [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives with End-Capping Groups as Solution-Processable Organic Semiconductors for Organic Field-Effect Transistors

et al. 2023

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“…Among them, thiophene‐based materials have gained considerable attention due to their ability to tune the physical properties of OSC, such as electronic structure, frontier molecular orbital energy levels, optical properties, and charge carrier mobility 12,13 . In particular, benzodithiophene (BDT) and anthradithiophene (ADT) materials were identified as solution‐processable p‐type and n‐type materials in OFETs and OPVs in recent years 14–18 . Masashi Mamada et al synthesized syn and anti‐configurations of ADT and found differences in the physical properties between them 19 .…”

Section: Introductionmentioning

confidence: 99%

“…and anthradithiophene (ADT) materials were identified as solutionprocessable p-type and n-type materials in OFETs and OPVs in recent years. [14][15][16][17][18] Masashi Mamada et al synthesized syn and anticonfigurations of ADT and found differences in the physical properties between them. 19 In particular, the p-channel FET mobility of the anti-ADT derivative (0.42 cm 2 V À1 s À1 ) was higher than that of the syn-ADT (0.12 cm 2 V À1 s À1 ) derivative.…”

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confidence: 99%

Theoretical investigations of the substituent effect on the opto‐electronic properties of the linearly fused napthadithiophene‐based molecules

Balakrishnan,

Muthukumar,

Arputharaj

et al. 2024

J Comput Chem

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The optoelectronic and charge transport properties of eight linearly fused Napthadithiophene (NDT) molecules with different electron‐withdrawing (EWG) and electron‐donating (EDG) substituents are studied using the density functional theory (DFT) methods. The effect of the substitution of EWG and EDG on the molecular structure, frontier molecular orbitals, ionization energy, electron affinity, reorganization energy, crystal packing, and charge carrier mobility are studied. The crystal structure simulation method is used to optimize the possible crystal packing arrangements for the studied molecules. The energy and distribution of electron density on the frontier molecular orbitals are strongly influenced by the substitution of EWG and EDG, thereby changes in the absorption spectrum and charge transport properties. The unsubstituted NDT molecule possesses a maximum hole mobility of 2.8 cm2 V−1 s−1, which is due to the strong intermolecular interactions. Therefore, the NDT molecule can be used as a p‐type semiconducting material. Among the studied molecules, the CCH‐substituted NDT molecule, NDT‐CCH, possesses a higher electron mobility of 1.13 cm2 V−1 s−1. The C2H5‐substituted NDT molecule, NDT‐C2H5, possesses ambipolar behavior with mobility of 4.77 × 10−2 cm2 V−1 s−1 and 1.70 × 10−2 cm2 V−1 s−1 for hole and electron, respectively.

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“…by the improved crystallinity of the OSC layer resulting in an increased charge mobility. 34 The above ambiguity can be even stronger if one considers the entire architecture of an OTFT. There are four major configurations of OTFTs, viz.…”

Section: Introductionmentioning

confidence: 99%

Selective and non-selective modification of electrodes in organic thin film transistors by self-assembled monolayers

et al. 2023

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[1]Benzothieno[3,2-b][1]benzothiophene-based liquid crystalline organic semiconductor for solution-processed organic thin film transistors

Cited by 10 publications

References 65 publications

Characterization of [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives with End-Capping Groups as Solution-Processable Organic Semiconductors for Organic Field-Effect Transistors

Characterization of [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives with End-Capping Groups as Solution-Processable Organic Semiconductors for Organic Field-Effect Transistors

Theoretical investigations of the substituent effect on the opto‐electronic properties of the linearly fused napthadithiophene‐based molecules

Selective and non-selective modification of electrodes in organic thin film transistors by self-assembled monolayers

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