This paper presents a novel, on-wafer de-embedding technique for the accurate small-signal equivalent circuit modelling of resonant tunneling diodes (RTDs). The approach is applicable to stabilised RTDs, and so enables the modelling of the negative differential resistance (NDR) region of the device's current-voltage (I-V) characteristics. Further, a novel quasianalytical procedure to determine all the equivalent circuit elements from the de-embedded S-parameter data is developed. Extraction results for a 10 x 10 µm 2 stabilised, low-current density RTD at different bias points show excellent fits between modelled and measured S-parameters up to 110 GHz.Index Terms-Bias oscillations, experimental modelling, parameter extraction, Resonant tunneling diode (RTD), smallsignal equivalent circuit. Lisbon. His current research interests include applications of resonant tunneling diodes and resonant tunneling diode based optoelectronic devices, and neural-inspired photonic circuits.