1.95-kV Beveled-Mesa NiO/β-Ga₂O₃ Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness

Superior high temperature performance of 8 kV NiO/Ga2O3vertical heterojunction rectifiers

“…The switching characteristics of the rectifiers are also of paramount interest, since they need fast recovery times and the ability to switch large currents. [45][46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63] Fig. 9 shows the temperature dependence of (top) Schottky rectifiers and (bottom) NiO/ Ga 2 O 3 heterojunction rectifiers of reverse recovery characteristics in which the devices were switched from 60 mA forward current to 0 V. The reverse recovery times are B 26 AE 2 ns and are tabulated in Table 1.…”

“…The forward current transport mechanism in such junctions is typically recombination at low biases and trap-assisted tunneling at higher bias. 10,21–26 Promising rectifier performance has been reported with this approach, 14–36 including V B of 8.32 kV, with figure of merit 13.2 GW cm −2 . 15…”

Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method

“…In recent years, the β-Ga 2 O 3 single crystal has attracted great interest in research due to its excellent optical and electrical properties [1][2][3] . Properties of the β-Ga 2 O 3 single crystal such as its huge bandgap (4.8 eV) [4] , high-breakdown electric field (8 MV/cm) [5] , and short absorption edge [6] make them appropriate materials for deep ultraviolet (UV) electronic devices and high power, high voltage, and low loss power devices [7][8][9][10][11][12][13] . In particular, β-Ga 2 O 3 single crystals can be obtained by the melt method, which includes the edge-defined film-fed growth [14] , optical floating zone (OFZ) [15] , Czochralski [16] , and vertical Bridgman [17] methods.…”

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

“…To address this issue, numerous researchers have used p-type semiconductor oxides such as NiO, Cu 2 O, Ir 2 O 3 , and others to integrate p–n heterojunctions based on Ga 2 O 3 , which is a promising technique for producing high-performance photodetectors and power electronic devices. Breakdown voltages greater than 1 kV have been reported using the p–n heterojunction method. − …”