1997
DOI: 10.1109/2944.658787
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1.55-μm InGaAsP-InP laser arrays with integrated-mode expanders fabricated using a single epitaxial growth

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Cited by 40 publications
(13 citation statements)
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“…Compared with a lateral coupler, the two vertically stacked asymmetric waveguides are separated by a spacer layer thickness, which is relatively easy to control. Due to these advantages, the vertical couplers have been utilized or proposed for various applications [1][2][3][4] .…”
Section: Introductionmentioning
confidence: 99%
“…Compared with a lateral coupler, the two vertically stacked asymmetric waveguides are separated by a spacer layer thickness, which is relatively easy to control. Due to these advantages, the vertical couplers have been utilized or proposed for various applications [1][2][3][4] .…”
Section: Introductionmentioning
confidence: 99%
“…The advantage of vertical integration is that active and passive devices can be grown in a single-step epitaxy and optimized independently according to their performance requirements 1 . Due to these and other advantages, the vertical couplers have been proposed and utilized in diverse applications [1][2][3][4][5][6][7][8] .…”
Section: Introductionmentioning
confidence: 99%
“…The first device uses an adiabatic coupling taper [10] and the second device uses a resonant coupling taper[l 11. Both of our schemes use single epitaxial growth and conventional fabrication schemes.…”
Section: Introductionmentioning
confidence: 99%