1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

Abstract

Self-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.