1.54 μm wavelength emission of highly Er-doped CaF2 layers grown by molecular-beam epitaxy

Daran, Emmanuelle; Legros, R.; Muñoz‐Yagüe, A.; Fontaine, C.; Bausá, Luisa E.

doi:10.1063/1.357140

Cited by 22 publications

(20 citation statements)

References 9 publications

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“…Moreover, the thermodynamical condi-tions imposed during MBE growth (low temperature and growth rate) can favorably modify the incorporation of rare-earth ions compared to bulk crystals. For example, in the case of Er-doped CaF , MBE growth has been shown to allow a significant increase in the optically active doping level [17]. Fluorides are good candidates for MBE growth as the free energies of fluoride-molecule dissociation are exceptionally high, which means that the film will have the correct stoechiometry, even at low growth temperature, unlike oxides, which are transported in the vapor as dissociated species.…”

Section: Thin-film Fabrication and Characterizationmentioning

confidence: 99%

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Bhutta

Chardon

Shepherd

et al. 2001

IEEE J. Quantum Electron.

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Abstract-We report the first fabrication and laser operation of channel waveguides based on LaF 3 planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full characterization, in terms of spectroscopy, laser results, and propagation losses, is given for the planar thin films upon which the channel waveguides are based. Two channel-fabrication methods are then described, the first involves ion milling and the second takes the novel approach of using a photo-definable polymer overlay. Laser operation in Nd-doped samples is demonstrated at 1.06, 1.05, and 1.3 m, and the potential for mid-infrared laser sources based on such guides is discussed.

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Section: Thin-film Fabrication and Characterizationmentioning

confidence: 99%

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Bhutta

Chardon

Shepherd

et al. 2001

IEEE J. Quantum Electron.

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“…Although there are reports in the literature on MBE growth of waveguide films of complex ternary oxide materials such as LiNbO 3 [120] and BaTiO 3 [121], most of the work on dielectric waveguide layers to date has focused on hetero-epitaxial deposition of rare-earth doped fluoride waveguides, such as ZnF 2 , PbF 2 , [122] CaF 2 , [123] and LaF 3 [124][125][126][127]. They were grown on different dielectric and semiconductor substrates and their propagation loss was on the order of 1 dB·cm -1 [122,126,127].…”

Section: Molecular Beam Epitaxy (Mbe)mentioning

confidence: 99%

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Grivas

2011

Progress in Quantum Electronics

192

102

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Abstract:The tremendous interest in the field of waveguide lasers in the past two decades is largely attributed to the geometry of the gain medium, which provides the possibility to store optical energy on a very small dimension in the form of an optical mode. This allows for realization of sources with enhanced optical gain, low lasing threshold, and small footprint and opens up exciting possibilities in the area of integrated optics by facilitating their on-chip integration with different functionalities and highly compact photonic circuits. Moreover, this geometrical concept is compatible with high power diode pumping schemes as it provides exceptional thermal management, minimizing the impact of thermal loading on laser performance. The proliferation of techniques for fabrication and processing capable of producing high optical quality waveguides has greatly contributed to the growth of waveguide lasers from a topic of fundamental research to an area that encompasses a variety of practical applications. In this first part of the review on optically pumped waveguide lasers the properties that distinguish these sources from other classes of lasers will be discussed. Furthermore, the current state-of-the art in terms of fabrication tools used for producing waveguide lasers is reviewed from the aspects of the processes and the materials involved. 2 1.IntroductionOver the last two decades the field of solid-state planar waveguide lasers has experienced a steady growth, progressing from a laboratory curiosity to an area that demonstrates a broad spectrum of applications, from multiwavelength laser channel arrays for telecommunications to diode-pumped planar structures with multiwatt output powers for sensing and ranging applications. Waveguide lasers are by no means a new field and the first report on such a source dates back in 1961, when laser operation of a waveguide based on an active glass core rod embedded in a low refractive index cladding was demonstrated [1]. However research efforts in the years that followed this report focused primarily on the development of optically pumped laser sources based on high optical quality bulk dielectric laser media in the form of rods and slabs. The merits of the waveguide geometry and the associated optical confinement have been first highlighted in single mode glass optical fibers. Fibers have proven an enabling technology for realization of highly efficient amplifier and laser sources owing to their unrivalled low loss performance and ability to maintain a small spot size and hence high intensities over lengths that are orders of magnitude longer than would normally be allowed by diffraction, [2,3]. Er-doped fiber amplifiers (EDFAs) in particular have directly contributed to the enormous expansion of the optical communications networks that underpin today's internet infrastructure by allowing for signal regeneration and optical data transmission over long distances. The excellent performance of fiber lasers and amplifiers provided motivation and triggered a major techn...

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“…The low temperature luminescence spectra of Er 3ϩ doped CaF 2 layers, obtained in a back-scattering configuration, 7,9,10 have revealed the formation of Er 3ϩ centers previously identified in the bulk material. 11,12 However, as a consequence of the thermodynamic conditions imposed by the MBE technique, the proportion of complex Er 3ϩ sites relative to isolated centers has been found to be lower in the MBE layers than in the bulk for the same Er 3ϩ concentration.…”

Section: Introductionmentioning

confidence: 96%

“…In particular, Nd 3ϩ and Er 3ϩ doped CaF 2 layers have been grown on CaF 2 , GaAs, or Si substrates, [5][6][7] and recently the growth of ZnF 2 and PbF 2 -SrF 2 layers on MgF 2 and GaAs substrates, respectively, has been reported. 8 The possibility of growing good quality homoepitaxial CaF 2 layers incorporating very high concentrations of Er 3ϩ ions, up to 50 mol %, 9 has opened interesting prospects for amplification or laser action.…”

Section: Introductionmentioning

confidence: 99%

Infrared luminescence decay and guided spectroscopy of Er3+ doped CaF2 molecular beam epitaxy layers

Lucas

Daran

Jacquier

et al. 1998

Journal of Applied Physics

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The decay of infrared luminescence in Er3+-doped CaF2 layers grown by molecular beam epitaxy (MBE) on CaF2 substrates has been studied as a function of the Er3+ concentration in the 0.05–35 mol % range. Excitations at 800 nm, 980 nm, and 1.48 μm were used to obtain the decay of the I13/24→4I15/2 luminescence at 1.54 μm. The results have been compared with those reported for the Er3+ doped CaF2 bulk and correlated with the low temperature luminescence study of these layers in a back-scattering configuration. The I13/24 level lifetime was found to be almost constant (∼11 ms) for Er3+ concentrations up to 5 mol %. At higher concentrations, the lifetime decreases due to energy transfer, but remains longer than the lifetime measured in the bulk because of the different formation of aggregated centers induced by the MBE growth conditions. The strong increase of the luminescence intensity observed from 10 to 35 mol % Er3+ concentrations despite the decrease of the lifetime is discussed. Finally, end-fire coupling of a diode laser at 977 nm and propagation through 15 mm long waveguides have been observed for moderate Er3+ concentrations (6 mol %). Guided and side IR luminescence spectra have been obtained and contrasted.

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1.54 μm wavelength emission of highly Er-doped CaF2 layers grown by molecular-beam epitaxy

Cited by 22 publications

References 9 publications

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Infrared luminescence decay and guided spectroscopy of Er3+ doped CaF2 molecular beam epitaxy layers

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