Abstract:Coupling light via stochastic needle-like nanostructures (black silicon) on the back side of a Ge-on-Si photodiode provides an increase of light absorption (and thus of the quantum efficiency) while preserving the f 3dB -bandwidth of the diode [1,2]. When transferring this technique from a single photodiode to array-like devices such as focal plane arrays (FPAs), it comes to optical crosstalk in adjacent pixels.A simulation model based on the ray tracing program Zemax can determine the absorption in Ge-on-Si F… Show more
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