1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

Design of high breakdown voltage GaN-based vertical HFETs with p-GaN island structure for power applications

“…And the simulated values of breakdown voltage and on-resistance well tally with experimental results previously published in Ref. [12]. These simulation models are then applied for simulating the proposed GaN PI-VHFET device with p-GaN islands.…”

“…A GaN-based vertical transistor is fabricated by Nie et al in Ref. [12], and we can see that the location of simulated conventional GaN VHFETs is very close to this experimental result. In addition, a highest FOM of GaN-based lateral transistor is reported by Bahat-Treidel et al in Ref.…”

“…Besides, there is also a contradiction between increasing breakdown voltage and sustaining low on-resistance at the same time [11]. In 2014, Nie et al reported that a GaN-based vertical transistor, which has a breakdown voltage of 1500 V and on-resistance of 2.2 mX cm 2 , has been fabricated [12]. And they have successfully realized high performance homoepitaxial growth on GaN substrates and developed the processing techniques, which is encouraging for vertical GaN-based architectures to improve performance of future power electronic applications.…”

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…Similar devices can be realized with all-AlGaN or Ga 2 O 3 , with appropriate current blocking techniques, to access higher operating voltages. [217][218][219][220] However, the CAVET suffers from its own problems; for example, it requires a number of etch-and-regrowth steps which to date have resulted in buried pn junctions with excessive leakage current, due to traps introduced at the etched surfaces. Nonetheless, normally-off devices may be easier to realize in a CAVET than in a vertical JFET, again due to the precise doping and layer thickness control afforded by epitaxy as opposed to lithography and implantation.…”

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

“…To achieve this confinement, a local carrier-blocking layer of p-GaN has been proposed. 4 Crystal regrowth 5 or ion implantation 6 into the n-type layer are commonly employed methods to achieve such a current-blocking layer.…”