1.5–2.7 GHz ultra low noise bypass LNA

Abstract

B y pass low-noise amplifier (LNA) can be used in the base station receiver to improve the d y namic range. It is difficult to achieve both ultra low noise at LNA mode and maintain good linearit y at b y pass mode simultaneousl y . In this work, we present the best performance b y pass LNA with 0.5 dB of noise figure (NF), 20 dB of gain at 1.95 GHz and high OIP3 of 35 dBm for both LNA and b y pass mode. Fabricated in 0.25um GaAs EID pHEMT process, the LNA is based on enhancement mode pHEMT cascode topolog y and the switches are designed with the depletion mode pHEMT. Index Terms -B y pass LNA, ultra low noise, switches, high linearit y , GaAs EID-pHEMT. .(J.15 ·0.10 ·0.05 0.00 0.05 0.10 0.15 Delta _ Vp Delta _ Vp Fig. 7. Simulated OIP3 and NF vs. Delta_ Vp

A Low Noise Power Amplifier MMIC to Mitigate Co-Site Interference in 5G Front End Modules

“…To quantify the performance of our LNPA with the state of art LNAs and PAs, we used a modified version of ITRS LNA-FOM [21] that has all the design parameters of LNA and PA, which is defined as. [28]) across various device technologies in the literature, with a FoM of 11.5x10 6 . Being a LNPA, it offers one of the highest IIP3 and OP 1dB while maintaining a low NF of 1.07 dB, offering a better performance than contemporary designs in the same band.…”