1.37 kV/12 A NiO/β-Ga<sub>2</sub>O<sub>3</sub>Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

Gong, Haigang; Zhou, Feng; Xu, Weizong; Yu, Xinxin; Xu, Yang; Yang, Yi; Ren, Fangfang; Gu, Shulin; Zheng, Yi; Zhang, Rong; Lu, Hai; Ye, Jiandong

doi:10.1109/tpel.2021.3082640

Cited by 85 publications

(56 citation statements)

References 21 publications

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“…Benchmarking against all other state-of-the-art representative diodes, including SiC SBDs/JBS diodes/PN diodes and GaN SBDs/PN diodes with extracted R on,sp at a fixed V F = 3 V, our Ga 2 O 3 HJ PN diodes achieve a record of nowadays power diodes, as compared in Fig. 5b 33 , 45 – 53 . Even under the real application circumstance, the P-FOM = BV 2 / R on,sp of the Ga 2 O 3 power diodes still surpasses the 1-D unipolar limit of the SiC.…”

Section: Resultsmentioning

confidence: 98%

Ultra-wide bandgap semiconductor Ga2O3 power diodes

et al. 2022

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Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga2O3 material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga2O3 heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga2O3, bipolar transport can induce conductivity modulation and low resistance in a low doping Ga2O3 material. Therefore, breakdown voltage of 8.32 kV, specific on-resistance of 5.24 mΩ⋅cm2, power figure-of-merit of 13.2 GW/cm2, and turn-on voltage of 1.8 V are achieved. The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga2O3 power diodes demonstrate their great potential for next-generation power electronics applications.

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Section: Resultsmentioning

confidence: 98%

Ultra-wide bandgap semiconductor Ga2O3 power diodes

et al. 2022

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“…A double-pulse test (DPT) circuit was designed to evaluate the switching performance of Ga2O3 SBD [39,[49][50][51][52]. The schematic of DPT circuit and its switching process are shown in Fig.…”

Section: Switching Performance Of Devicementioning

confidence: 99%

-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter

Guo
¹
,

Jian
²
,

Hao
³

et al. 2022

IEEE J. Electron Devices Soc.

6
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1
0

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β-Ga2O3 Schottky barrier diodes with field plate (FP-SBDs) are fabricated and their SPICE-compatible model are constructed for double-pulse test circuit and DC-DC boost converter simulations. The reverse recovery time (trr) of the β-Ga2O3 SBD is 8.8 ns and its reverse recovery charge (Qrr) is 8.33 nC when switching from a forward current of 1 A to a reverse bias voltage of 100 V with a di/dt of 400 A/μs, which is analogous with the prediction of our model. Device with the radius of 500 μm was fabricated, a current of 2 A can be obtained at the forward voltage of 2 V, meanwhile, the breakdown voltage is 467 V. The Ga2O3based converter module after device packaging with TO-220 reveals a comparative efficiency to that of the SiC-based converter under multiple conditions, and reached up to 95.62% at the input voltage of 200 V. The decent performance of Ga2O3 FP-SBD and its DC-DC converter indicates great potential in power application.

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“…To address this issue, numerous researchers have used p-type semiconductor oxides such as NiO, Cu 2 O, Ir 2 O 3 , and others to integrate p–n heterojunctions based on Ga 2 O 3 , which is a promising technique for producing high-performance photodetectors and power electronic devices. Breakdown voltages greater than 1 kV have been reported using the p–n heterojunction method. − …”

Section: Introductionmentioning
confidence: 99%

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications
Sheoran
¹
,
Kumar
²
,
Singh
³

2022
ACS Appl. Electron. Mater.
38
0
24
0
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Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect transistors (FETs). This is due to its excellent material properties such as ultrawide bandgap of 4.6–4.9 eV, high breakdown electric field of 8 MV/cm, very high Baliga’s figure of merit (BFOM) and mature technology for large bulk single crystals, and epitaxial techniques with controllable n-type doping. Ohmic and rectifying metal–semiconductor contacts on β-Ga2O3 have been developed over the past decade. This work comprehensively reviews the recent development of metal–semiconductor contacts on β-Ga2O3. We start with basic concepts of metal–semiconductor contacts, which is followed by summarizing the current literature on ohmic and Schottky contacts on β-Ga2O3. Finally, the status of high-power Schottky diode contact on β-Ga2O3 is presented.

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1.37 kV/12 A NiO/β-Ga₂O₃Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

Cited by 85 publications

References 21 publications

Ultra-wide bandgap semiconductor Ga2O3 power diodes

Ultra-wide bandgap semiconductor Ga2O3 power diodes

-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

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1.37 kV/12 A NiO/β-Ga2O3Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

Cited by 85 publications

References 21 publications

Ultra-wide bandgap semiconductor Ga2O3 power diodes

Ultra-wide bandgap semiconductor Ga2O3 power diodes

-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

Contact Info

Product

Resources

About

1.37 kV/12 A NiO/β-Ga₂O₃Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications