1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

Abstract

We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

Polarization control of 1.6 μm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001)

“…For example VCSELs based on noncylindrical cavities, on spatial gain or loss anisotropy, on the use of external stress or optical feedback have been successfully realized. 5,[9][10][11] They show a polarization control toward a specific direction, with an orthogonal polarization suppression ratio ͑OPSR͒ being for the best value close to 30 dB. Nevertheless, most of these realizations increase the fabrication complexity and cost.…”

“…As already reported, we experimentally observed that the QW VCSEL dominant polarization switches on the sample, the extracted OPSR varying from 26 dB down to Ϫ14 dB, in a very dispersive way. [5][6][7][8][9] In opposite, Fig. 3͑b͒ represents the measurements for the QDH VCSELs.…”

“…[5][6][7][9][10][11] We believe that the fixed polarization and such an important and stable OPSR are mainly due to the QDH in-plane optical anisotropy. Ukhanov et al 20 have reported a QDH TE gain ratio close to 2 in linear SOA, depending of the QDH alignment ͑parallel or perpendicular͒ in reference to the SOA cavity axis.…”

Investigation of a chemically treated InP(1 0 0) surface during hydrophilic wafer bonding process

“…This technology is widely used for manufacturing complex optoelectronic and microelectronic devices [2][3][4]. Direct wafer bonding of III-V/Si requires two smooth, clean surfaces to be brought into contact at room temperature and then annealed at a high temperature [5].…”

Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

“…Therefore, it would be preferable to utilize an active region based on anisotropic polarization gain to solve the problem of the polarization. VCSEL based on strained quantum-wells (QWs) grown on (311)A or (311)B oriented substrate evidences a strong polarized laser emission [6,7]. Another solution to get an active region with gain anisotropy without using a special substrate may be the QWires growth on InP(100).…”