1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

“…Ground-state lasing at RT, high internal quantum efficiency, and low threshold current density have already been demonstrated in both stacked-layer [2]- [5] and single-layer QD lasers [6], [7]. Efficient [8] and narrow-linewidth [9] RT emission at 1.3-m wavelength has been achieved recently, and the first QD lasers operating in this wavelength region are already reported [10]- [13]. Other properties, like differential gain, small signal modulation bandwidth, and alpha parameter, are still under discussion in the comparison between the expected superior performances and the measured values.…”

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

“…Low-threshold lasers in the 1.3 m region were demonstrated using this approach. 7,8 In order to assess this new gain material for application in high-speed laser sources, parameters such as carrier lifetime, capture, and relaxation times must be measured. In this letter, we investigate these parameters by time-resolved photoluminescence ͑PL͒ in InAs QDs embedded in a InGaAs QW and emitting at 1.3 m at room temperature.…”

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

“…[1][2][3] One of the most widely investigated methods for QD fabrication is self-assembly in the Stranski-Krastanov (SK) growth mode in the epitaxy of lattice mismatched systems. For the most common growth conditions for InAs on GaAs͑100͒ these QDs typically emit around 1 m with a linewidth of several tens of milli-electron-volts.…”