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           InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation

Würtemberg, R. Marcks von; Sundgren, P.; Berggren, Jesper; Hammar, Mattias; Ghisoni, M.; Odling, Elsy; Oscarsson, V.; Malmquist, J.

doi:10.1063/1.1823012

Cited by 19 publications

(12 citation statements)

References 9 publications

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“…The numerical model was also used to analyse the modal losses of the fundamental mode and the first higher order mode of the device. This analysis is presented in [26]. It was found that the modal losses differ only by approximately 2% which explains the multimode operation.…”

Section: Single Mode Operationmentioning

confidence: 95%

Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

et al. 2004

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We describe the development of long-wavelength InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs). Using highly strained double-quantum wells (DQWs) in combination with negative gain-cavity detuning we have been able to realise such VCSELs with emission wavelength up to 1300 nm. High-performance device characteristics include mWrange output power, mA-range threshold currents, 10 Gbit/s data transmission and very good temperature stability with continuous-wave operation up to at least 140°C. Singlemode emission is realised using an integrated mode filter consisting of a patterned silicon layer on the out-coupling mirror surface, yielding output power and threshold currents for 1270-nm devices of 1.2 -0.5 mW and 2.3 -0.6 mA, respectively, over a temperature interval of 10 -140°C. Multimode devices have been found to deliver more than 2 mW at 1290 nm. Preliminary lifetime measurements do not reveal any intrinsic reliability problems related to the highly strained quantum wells.

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Section: Single Mode Operationmentioning

confidence: 95%

Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

et al. 2004

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“…The dilute-nitride materials are full of potential in this area, but the growth of these nitrogen-containing materials is quite challenging and the reliability of this novel material is still questionable. Therefore, the mature InGaAs/GaAs QWs seem to be a candidate for 1.2-1.3 mm lasers and they have been re-visited by the scientific community [7][8][9][10][11][12][13][14][15][16][17][18][19], with results such as the MBEgrown 1.24 mm lasers reported by Sung and Lin [7] and the metalorganic vapor-phase epitaxy (MOVPE)-grown 1.26 mm VCSELs reported by Chen et al [8].…”

Section: Introductionmentioning

confidence: 90%

“…It requires much effort to optimize the growth conditions of highly strained InGaAs layers. However, with the advancing state-of-the-art epitaxial techniques, several groups [7][8][9][10][11][12][13][14][15][16][17][18][19] have reported InGaAs/GaAs QWs operating around 1.2 mm. The InGaAs/ GaAs QWs have the potential to be low-cost and high-performance semiconductor lasers, especially for the high-power 1.2 mm edge-emitting lasers [9] and 1.3 mm vertical cavity surface emitting lasers (VCSELs) [10].…”

Section: Introductionmentioning

confidence: 99%

Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

Chen

Wan

et al. 2008

Journal of Crystal Growth

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“…It should also be noted that, rather than etching a surface relief, a relief structure can be deposited to preferentially lower the cavity loss for the fundamental mode [64,65].…”

Section: Single-mode Emission From Inherently Multimode Vcselsmentioning

confidence: 99%

Single-Mode VCSELs

Larsson

Gustavsson

2012

Springer Series in Optical Sciences

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The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot. Such beam properties are required in many applications. In this chapter, after discussing applications of single-mode VCSELs, we introduce the basics of fields and modes in VCSELs and review designs implemented for singlemode emission from VCSELs in different materials and at different wavelengths. This includes VCSELs that are inherently single-mode as well as inherently multimode VCSELs where higher-order modes are suppressed by mode selective gain or loss. In each case we present the current state-of-the-art and discuss pros and cons. At the end, a specific example with experimental results is provided and, as a summary, the most promising designs based on current technologies are identified. IntroductionThe vertical-cavity surface-emitting laser (VCSEL) is an attractive light source for an expanding range of applications. Due to low cost manufacturing, low power consumption, simplified packaging, attractive beam properties (circular and low divergence beam) and excellent high-speed modulation characteristics at low currents, it has replaced the edge-emitting laser in short-reach optical communication links

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1.3 μ m InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation

Cited by 19 publications

References 9 publications

Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

Single-Mode VCSELs

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