1.3 µm single‐mode extended cavity GaInNAs lasers produced using a sputtered SiO ₂ quantum well intermixing technique

Abstract

Extended cavity lasers have been fabricated in GaInNAs/GaAs quantum well material with an emission wavelength of 1.3 µm. The bandgap of the quantum wells in the passive section was increased using a sputtered silica intermixing technique. Compared to lasers of the same length without an integrated passive section a slight increase in threshold current was observed, from 300 mA to 340 mA. The losses in the passive section were estimated to be 5 cm -1 .