1.3 to 1.6 micron quantum dot devices

Zhang, L.; Gray, A.L.; Wang, R.; Luong, S.; Cheng, L.; Sun, Kathy; Bryan, C.; Nabulsi, F.; Whittington, T.; Zou, Z.; Olona, L.; Wiggins, C.; Tumolillo, Tom; Zilko, J.; Varangis, P.M.; Lester, L. F.; Shen, Hui; Stintz, A.; Malloy, K.J.

doi:10.1109/iciprm.2004.1442816

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004.

DOI: 10.1109/iciprm.2004.1442816

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1.3 to 1.6 micron quantum dot devices

L. Zhang¹,

A.L. Gray²,

R. Wang³

et al.

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Cited by 2 publications

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“…These variations are common in research reactors, but improve in production scale. 10,11 The photoresponse of the QD solar cell, as well as the reference cell, is measured by using the tungsten halogen lamp filtered through a Spectra pro-275 monochromator. Photocurrent from the cell is measured between 400 and 1400 nm using a picoammeter.…”

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Ga Sb ∕ Ga As type II quantum dot solar cells for enhanced infrared spectral response

Laghumavarapu

Moscho

Khoshakhlagh

et al. 2007

Applied Physics Letters

201

110

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The authors report an enhanced infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots ͑QDs͒ formed using interfacial misfit array growth mode. The material and devices, grown by molecular beam epitaxy, are characterized by current-voltage and spectral response characteristics. From 0.9 to 1.36 m, these solar cells show significantly more infrared response compared to reference GaAs cells and previously reported InAs QD solar cells. The short circuit current density and open circuit voltages of solar cells with and without dots measured under identical conditions are 1.29 mA/ cm 2 , 0.37 V and 1.17 mA/ cm 2 , 0.6 V, respectively.

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mentioning

confidence: 99%

Ga Sb ∕ Ga As type II quantum dot solar cells for enhanced infrared spectral response

Laghumavarapu

Moscho

Khoshakhlagh

et al. 2007

Applied Physics Letters

201

110

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An InP-Based Quantum-Dot Tunable Three-Section Distributed Bragg Reflector Laser

Robbins

Duck

Whitbread

et al. 2008

IEEE Photon. Technol. Lett.

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1.3 to 1.6 micron quantum dot devices

Cited by 2 publications

References 9 publications

Ga Sb ∕ Ga As type II quantum dot solar cells for enhanced infrared spectral response

Ga Sb ∕ Ga As type II quantum dot solar cells for enhanced infrared spectral response

An InP-Based Quantum-Dot Tunable Three-Section Distributed Bragg Reflector Laser

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