1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Yu, Hsin-Chieh; Wang, J.S.; Su, Yan–Kuin; Chang, Shoou‐Jinn; Lai, Fang‐I; Chang, Yung-Cheng; Kuo, Hao‐Chung; Sung, Chia-Pin; Hong, Yang; Lin, K. F.; Wang, J.M.; Chi, J.Y.; Hsiao, R. S.; Mikhrin, S. S.

doi:10.1109/lpt.2005.863166

Cited by 47 publications

(24 citation statements)

References 7 publications

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“…1) is similar to those reported by Yu et al [9] and Chang et al [10]. The concept of the QD inside the quantum well (QW) has been utilized [13].…”

Section: The Structuresupporting

confidence: 81%

“…Therefore VCSELs equipped with rather longer cavities of the lengths equal to at least 3l may be such sources. This result is sup− ported by papers reporting successful operation of VCSELs equipped with three [9] and five [10] groups of three QDs. The above limiting value of g th of about 1000 cm -1 may be increased using more uniform QDs and/or their higher sur− face densities.…”

Section: Resultsmentioning

confidence: 58%

“…Hence in− stead of single−QD layers, stacks of several QD layers have been applied [7,8]. Currently, even several such stacks of QD layers are located within a laser active region [9,10]. They should be appropriately arranged within a laser cavity to increase an interaction between electromagnetic field and free carriers taking part in a radiative recombination.…”

Section: Introductionmentioning

confidence: 99%

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Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Piskorski

Wasiak

Sarzała

et al. 2009

Opto-Electronics Review

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Room-temperature (RT) continuous-wave (CW) performance of modern 1300-nm oxide-confined In(Ga)As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode lasers (VCSELs) taking advantage of many QD sheets is investigated using our comprehensive self-consistent simulation model to suggest their optimal design. Obviously, quantum dots should be as uniform as possible and as dense as possible to ensure high enough optical gain. Besides, our simulation reveals that efficient and uniform current injection into VCSEL active regions necessary to enhance excitation of the desired fundamental LP01 mode is accomplished in the VCSEL configuration with the broad-area bottom contact and the ring upper one as well as with the oxide aperture localized within the first period of the upper p-type DBR. The doping of the DBR mirrors is chosen as a compromise between their high enough electrical conductivity and low enough free-carrier absorption. The oxide aperture is additionally introducing the radial optical waveguiding. Moreover, our analysis has been concluded that VCSEL active regions should be composed of at least 9 QD sheets to acquire efficient RT CW operation. Furthermore, rather longer optical cavities are recommended in this case because localization of QD sheets should be adjusted to the anti-node positions of the optical cavity standing wave.

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“…1) is similar to those reported by Yu et al [9] and Chang et al [10]. The concept of the QD inside the quantum well (QW) has been utilized [13].…”

Section: The Structuresupporting

confidence: 81%

Section: Resultsmentioning

confidence: 58%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Piskorski

Wasiak

Sarzała

et al. 2009

Opto-Electronics Review

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“…Первая состоит в со-здании монолитных полупроводниковых гетероструктур с распределенными брэгговскими отражателями (РБО) на основе пары материалов GaAs/AlGaAs, с упругона-пряженными квантовыми ямами GaInAsN/GaAsN [1][2][3][4][5][6][7], GaInNAsSb/GaNAsSb [8][9][10][11][12] или квантовыми точками InAs/InGaAs [13][14][15][16][17][18][19]. Такие гетероструктуры выращи-ваются на подложках GaAs.…”

Section: Introductionunclassified

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

Бабичев¹,

Крыжановская²,

Моисеев³

et al. 2017

Физика И Техника Полупроводников

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Продемонстрирована возможность формирования гибридных метаморфных гетероструктур вертикально излучающих лазеров (ВИЛ) спектрального диапазона 1300 нм. Метаморфная полупроводниковая часть гетероструктуры с распределенным брэгговским отражателем на основе пары GaAs/AlGaAs и активной областью на основе квантовых ям InAlGaAs/InGaAs выращена методом молекулярно-пучковой эпитаксии на подложке GaAs(100). Верхнее диэлектрическое зеркало с распределенным брэгговским отражателем сформировано на основе пары SiO2/Ta2O5 методом магнетронного распыления. Проведено изучение спектров микрофотолюминесценции гетероструктур вертикально излучающих лазеров при комнатной температуре в диапазоне мощностей 0-70 мВт (длина волны оптической накачки составила 532 нм, диаметр сфокусированного пучка ~ 1 мкм). Наличие сверхлинейного хода зависимости интенсивности фотолюминесценции от мощности накачки наряду с заужением полуширины пиков фотолюминесценции и изменением модового состава могут быть обусловлены лазерной генерацией гетероструктуры вертикально излучающих лазеров. Полученные результаты свидетельствуют о возможности использования технологии метаморфного роста гетероструктур на подложках GaAs для создания вертикально излучающих лазеров спектрального диапазона 1300 нм. DOI: 10.21883/FTP.2017.09.44879.8557

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“…On the other hand the above requirements can be satisfied by the second-generation system taking advantage of 1.3-μm radiation. The material systems discussed for 1.3-μm light emission include the InGaAsP [1], GaInNAs [2], GaAsSb [3] and InGaAs quantum wells (QWs) [4], and as well as In(Ga)As quantum dots [5]. As an alternative option, InAsP [6] and AlGaInAs [7] QWs can be used in a VCSEL structure.…”

Section: Introductionmentioning

confidence: 99%

Computer simulation of an operation of the 1.3-µm phosphide-based MQW TJ-VCSELs: excitation of various transverse LP<inf>ij</inf> modes

Piskorski

2011

2011 13th International Conference on Transparent Optical Networks

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A comprehensive fully self-consistent optical-electrical-thermal-recombination model of the 1.3-μm tunneljunction (TJ) InAsP/InGaAsP and AlGaInAs/AlGaInAs vertical-cavity surface-emitting diode lasers (VCSELs) is used to determine their continuous-wave (CW) performance characteristics. As expected, for the devices with large TJ, higher-order transverse LP ij modes exhibit the lowest lasing thresholds. However, the desired single fundamental LP 01 mode operation remains dominating one for tunnel junctions of diameters up to 7 μm (InAsP/InGaAsP VCSEL) and 6 μm (AlGaInAs/AlGaInAs VCSEL) within quite a wide range of ambient temperatures: 290 − 355 K and 290 − 405 K, respectively. Therefore, the 1.3-μm InAsP/InGaAsP and AlGaInAs/AlGaInAs multiple quantum well VCSELs have been found to offer a very promising CW performance as sources of carrier radiation for the optical fibre communication. Keywords: QW VCSELs, 1.3-µm VCSELs, simulation of a diode laser operation, optical fibre communication. INTRODUCTIONVertical-cavity surface-emitting diode lasers (VCSELs) because of their significantly intrinsic advantages over edge-emitting lasers, such as a ultralow threshold current, single-longitudinal-mode operation, a circular outputbeam profile, small beam divergence and wafer-scale integrability, compose the most suited laser configuration for the fibre application. Commercially available optical fibre communication systems used in local area networks currently employ 0.85-μm radiation. However, performance of this first-generation optical-fibre network is not able to meet the demands of the extremely quickly developing Internet and data transmission needs any longer. On the other hand the above requirements can be satisfied by the second-generation system taking advantage of 1.3-μm radiation. The material systems discussed for 1.3-μm light emission include the InGaAsP [1], GaInNAs [2], GaAsSb [3] and InGaAs quantum wells (QWs) [4], and as well as In(Ga)As quantum dots [5]. As an alternative option, InAsP [6] and AlGaInAs [7] QWs can be used in a VCSEL structure.The main goal of the present paper is to examine with the aid of the simulation model a possibility to use the phosphide based TJ-VCSELs as sources of the 1.3-μm carrier wave for the optical fibre communication. In particular, an excitation of various transverse modes will be analysed.

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1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Cited by 47 publications

References 7 publications

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

Computer simulation of an operation of the 1.3-µm phosphide-based MQW TJ-VCSELs: excitation of various transverse LP<inf>ij</inf> modes

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1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Cited by 47 publications

References 7 publications

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

Computer simulation of an operation of the 1.3-&#x00B5;m phosphide-based MQW TJ-VCSELs: excitation of various transverse LP<inf>ij</inf> modes

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Computer simulation of an operation of the 1.3-µm phosphide-based MQW TJ-VCSELs: excitation of various transverse LP<inf>ij</inf> modes