1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Shernyakov, Yu. M.; Bedarev, D. A.; Kondrat'eva, E.Yu.; Kop’ev, P. S.; Kovsh, A. R.; Maleev, N. A.; Maximov, M. V.; Mikhrin, S. S.; Tsatsul’nikov, A. F.; Ustinov, V. M.; Volovik, B. V.; Zhukov, A. E.; Alfërov, Zh. I.; Ledentsov, N. N.; Bimberg, D.

doi:10.1049/el:19990596

Cited by 131 publications

(35 citation statements)

References 8 publications

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“…Low-threshold lasers in the 1.3 m region were demonstrated using this approach. 7,8 In order to assess this new gain material for application in high-speed laser sources, parameters such as carrier lifetime, capture, and relaxation times must be measured. In this letter, we investigate these parameters by time-resolved photoluminescence ͑PL͒ in InAs QDs embedded in a InGaAs QW and emitting at 1.3 m at room temperature.…”

Section: ͓S0003-6951͑00͒05123-8͔mentioning

confidence: 99%

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

Fiore¹,

Borri²,

Langbein³

et al. 2000

Applied Physics Letters

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We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 μm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots.

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Section: ͓S0003-6951͑00͒05123-8͔mentioning

confidence: 99%

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

Fiore¹,

Borri²,

Langbein³

et al. 2000

Applied Physics Letters

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“…First quantum dot (QD) lasers with single QD layers within their active regions [1][2][3] have happened to be very efficient sources of the 1300−nm carrier wavelength used in the sec− ond−generation optical fibre communication [4][5][6]. How− ever, their output powers saturate at relatively low levels and therefore their performance is very limited.…”

Section: Introductionmentioning

confidence: 99%

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Piskorski

Wasiak

Sarzała

et al. 2009

Opto-Electronics Review

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Room-temperature (RT) continuous-wave (CW) performance of modern 1300-nm oxide-confined In(Ga)As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode lasers (VCSELs) taking advantage of many QD sheets is investigated using our comprehensive self-consistent simulation model to suggest their optimal design. Obviously, quantum dots should be as uniform as possible and as dense as possible to ensure high enough optical gain. Besides, our simulation reveals that efficient and uniform current injection into VCSEL active regions necessary to enhance excitation of the desired fundamental LP01 mode is accomplished in the VCSEL configuration with the broad-area bottom contact and the ring upper one as well as with the oxide aperture localized within the first period of the upper p-type DBR. The doping of the DBR mirrors is chosen as a compromise between their high enough electrical conductivity and low enough free-carrier absorption. The oxide aperture is additionally introducing the radial optical waveguiding. Moreover, our analysis has been concluded that VCSEL active regions should be composed of at least 9 QD sheets to acquire efficient RT CW operation. Furthermore, rather longer optical cavities are recommended in this case because localization of QD sheets should be adjusted to the anti-node positions of the optical cavity standing wave.

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“…The recent breakthrough in device application of QDs [1] is mostly related to Stranski±Krastanow growth, resulting in the formation of three-dimensional (3D) islands on top of a wetting layer. 1.3 mm-Emitting GaAs-based lasers with parameters, superior to those in InP-based quantum well (QW) lasers are recently created [3]. With regard to this progress, there are many attempts to apply similar concept to wide-gap lasers based on II±VI material systems and group-III nitrides [4,5].…”

Section: Introductionmentioning

confidence: 99%

Quantum dots formed by ultrathin insertions in wide-gap matrices

et al. 2000

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We report on experimental and theoretical studies on a new type of quantum-dot (QD) structures obtained using ultrathin, i.e. below the critical thickness for 2D±3D transition, strained narrow gap insertions in wide bandgap matrices. We concentrate on submonolayer (SML) or slightly above 1 ML CdSe insertions in a wide-gap II±VI matrices and give the ®rst results on ultrathin InGaN insertions in a GaN matrix. A discussion on detailed comparison of our original results with the results of other authors is presented. The formation of dense arrays (up to 10 12 cm 22 ) of nanoscale two-dimensional (2D) islands is revealed in processed high-resolution transmission electron microscopy images. In the case of stacked sheets of SML insertions, the islands in the neighboring sheets are formed predominantly in correlated or anticorrelated way for thinner and thicker spacer layers, respectively. Different polarization of photoluminescence (PL) emission recorded in edge geometry for vertically-uncoupled and coupled QDs con®rms the QD nature of excitons. By monitoring of sharp lines due to single QDs using cathodoluminescence the 3D con®nement is manifested. We demonstrate signi®cant squeezing of the QD exciton wavefunction in the lateral direction using magneto-optical experiments. We point to complete suppression of lateral motion of excitons bound to islands in case of wide-gap (ZnMgSSe) matrices, as follows from PL excitation studies. A resonant (0-phonon) lasing is observed in ultrathin CdSe insertions and proves the lifting of the k-selection rule for QD excitons. We show that lack of exciton screening in QDs up to high excitation densities enables strong resonant modulation of the refractive index in stacked ultrathin insertions and allows realization of resonant (excitonic) waveguiding and lasing. This enables the realization of a new type of heterostructure laser operating without external optical con®nement by layers having lower average refractive indices. Ultrahigh QD excitonic gain in dense arrays of stacked QDs allows a new type of surface-emitting laser. q 2000 Elsevier Science S.A. All rights reserved.

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1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Cited by 131 publications

References 8 publications

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Quantum dots formed by ultrathin insertions in wide-gap matrices

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