1.3, 1.55 μm photodetector based on Ge/GaAs hetero-integration prepared by MOCVD

Xiao, Mingquan; Gong, Shijie; Zheng, Xieen; Jin, Yunyun

doi:10.1109/ucet51115.2020.9205465

2020 International Conference on UK-China Emerging Technologies (UCET) 2020

DOI: 10.1109/ucet51115.2020.9205465

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1.3, 1.55 μm photodetector based on Ge/GaAs hetero-integration prepared by MOCVD

Mingquan Xiao

Shijie Gong

Xieen Zheng

et al.

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1.3, 1.55 μm photodetector based on Ge/GaAs hetero-integration prepared by MOCVD

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