1.17-μm highly strained GaInAs-GaAs quantum-well laser

High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers

“…The threshold and transparency current densities obtained from sample C are 70 A/cm and 50 A/cm , respectively, which are quite low compared to other published data [5], [7] on similar structures. The inclusion of the GaAsP tensile barriers surrounding the QW may also improved the carrier capture in the QW, which is reflected in the improvement in the internal efficiency (61%).…”

“…The ease in forming high-quality AlGaAs-based DBRs on GaAs substrates, and the low-temperature sensitive active regions, makes long-wavelength ( and m) VCSELs on GaAs substrates an attractive alternative [4]. Another potential application for long-wavelength VCSELs, with emission wavelengths 1.2-m or longer, is to replace conventional 780-850-nm VCSELs for higher speed short-distance optical datalink application [5].…”

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

“…The [AsH ]/III ratio was in excess of 100 for the InGaAs-active laser structures, but was reduced ([AsH ]/III [10][11][12][13][14][15][16][17][18][19][20] for the incorporation of nitrogen in the InGaAsN structures. Trimethylgallium (TMGa), trimethylaluminum (TMAl), and trimethylindium (TMIn) are used as the group III sources.…”

“…In order to characterize the temperature dependence of the external differential efficiency, one can go back to the fundamental equation to express the external differential efficiency as a function of current injection efficiency, mirror, and internal loss as follows: (12) As shown in (5), the temperature dependence of the external differential efficiency ( ) can be expressed as a derivative of the external differential efficiency with respect to temperature. By taking into account the temperature dependence of the current injection efficiency and the internal loss, we can express the inverse of the value as follows: (13) In (13), the cavity-length-dependent term of the expression came from the modal threshold gain ( ) and the temperature dependence of the internal loss ( ).…”

“…The use of highly strained InGaAs QW active lasers to extend the emission wavelength to 1.20 m was pioneered by Sato et al [10] and Iga and Koyama et al [11], [12]. Recently, GaAsP tensile barriers have also been implemented to strain-compensate the InGaAs QW [9], [13].…”