1.02 GHz cross-sectional Lamé mode resonator with high KT2 exceeding 4.6%

Cassella, Cristian; Qian, Zhenyun; Hummel, Gwendolyn; Rinaldi, Matteo

doi:10.1109/memsys.2016.7421712

Cited by 7 publications

(6 citation statements)

References 7 publications

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“…To apply this formula for LFE CLMR, Equation ( 7 ) was re-evaluated. Specifically,

term was substituted with the linear frequency adopted from [ 32 ] for degenerate CLMR modes

while

expression was almost unaltered from the one in [ 31 ] with the exception of substituting the

coefficient with

as the CLMR mode was two-dimensional

where n denotes the number of metal electrode pairs and

and

are the equivalent layer stack thickness, density and Young’s modulus, respectively. The thermal resistance,

, of the narrowly anchored resonator in [ 31 ] is expressed as

where

and

are the length, width and total thickness of the layers comprising anchors and

is the material stack conductivity.…”

Section: Super High Frequency Alscn Clmrsmentioning

confidence: 99%

Study of the Performance Enhancement of Sc-Doped AlN Super High Frequency Cross-Sectional Lamé Mode Resonators

et al. 2023

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The increasing use of mobile broadband requires new acoustic filtering technologies that can operate efficiently at frequencies above 6 GHz. Previous research has shown that AlN Super High Frequency (SHF) Cross-Sectional Lamé Mode resonators (CLMRs) can address this challenge, but their performance is limited by the piezoelectric strength of AlN. In this work, we explore the use of substitutional doping of Al in AlN with Sc to enhance the kt2 values of SHF CLMRs. Our results showed that the measured kt2·Qm product of Al72Sc28N CLMRs was four times greater than that of AlN CLMRs operating at the same frequency. Additionally, the measured fractional bandwidth (FWB) of Al72Sc28N 2nd order ladder filters was 4.13%, a fourfold improvement over AlN filters with the same design. We also discuss other aspects of the technology, such as power handling, losses, and spurious mode suppression, and identify potential areas for future research.

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“…To apply this formula for LFE CLMR, Equation ( 7 ) was re-evaluated. Specifically,

term was substituted with the linear frequency adopted from [ 32 ] for degenerate CLMR modes

while

expression was almost unaltered from the one in [ 31 ] with the exception of substituting the

coefficient with

as the CLMR mode was two-dimensional

where n denotes the number of metal electrode pairs and

and

are the equivalent layer stack thickness, density and Young’s modulus, respectively. The thermal resistance,

, of the narrowly anchored resonator in [ 31 ] is expressed as

where

and

are the length, width and total thickness of the layers comprising anchors and

is the material stack conductivity.…”

Section: Super High Frequency Alscn Clmrsmentioning

confidence: 99%

Study of the Performance Enhancement of Sc-Doped AlN Super High Frequency Cross-Sectional Lamé Mode Resonators

et al. 2023

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“…However, the frequency of BAW resonators relies on the physical thickness of the stack, and the modulation of frequency requires either a wafer trimming process or additional loading layers, which hinders the integration of multiple filters with various filtering bands on a single chip. Research efforts have been focused on designing resonators with lithographic frequency tunability to overcome this limitation. − For example, we reported an Al 0.92 Sc 0.08 N-based (1 μm thickness) modified LCAT mode resonator with tunable frequency by lithographically controlling the electrode pitch, as shown in Figure Figure a,b shows the schematic of the modified device structure and the corresponding scanning electron microscopy (SEM) image of the fabricated resonator, in which the bottom electrode is electrically floating.…”

Section: Alscn-based Applicationsmentioning

confidence: 99%

Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications

Chen

Liu

et al. 2022

ACS Appl. Electron. Mater.

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Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to its unique properties. The wurtzite-structure AlScN is compatible with the complementary metal oxide semiconductor (CMOS) process and has improved piezoelectricity compared with undoped aluminum nitride (AlN), making it a promising candidate to be used for next-generation radio frequency (RF) microelectromechanical system (MEMS) building blocks. Additionally, the ferroelectricity observed in AlScN can be potentially applied to ferroelectric memory devices. In this spotlight article, we provide a brief introduction of AlScN and summarize the recent progress of AlScN-based applications, including RF acoustic wave resonators, filters, and ferroelectric memory devices. Finally, the current challenges as well as the future opportunities of AlScN materials and related applications are discussed.

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“…Similarly to CMRs, CLMRs can be excited through either a Lateral-Field-Excitation (LFE) [7] or a thickness-field-excitation (TFE) approach [6]. LFE CLMRs are formed by one set of IDT patterned on either the top or the bottom surface of an AlN layer.…”

Section: Figure 1: Schematic-view Of a 3-finger Clmr The Device Is Formed By Two Idts Sandwiching An Aln Film The Pitch Of The Idts (W) Imentioning

confidence: 99%

“…More recently, AlN cross-sectional Lamé-mode resonators were demonstrated (CLMRs) [5], [6]. CLMRs are piezoelectric resonators formed by two metallic IDTs sandwiching an AlN plate.…”

Section: Introductionmentioning

confidence: 99%

Unprecedented Figure of Merit in Excess of 108 in 920 MHZ Aluminum Nitride Cross-Sectional Lamé Mode Resonators Showing Kt2 in Excess of 6.2%

Cassella¹,

Chen²,

Qian³

et al. 2016

2016 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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In this work we demonstrate a 900 MHz cross-sectional Lamémode resonator showing a kt 2 in excess of 6.2% and a loaded quality factor in excess of 1750. Such a high kt 2 , which closely matches that Finite-Element-Methods (FEM) predicted value, is attained through the use of a 3-finger CLMR and a thickness-fieldexcitation (TFE) scheme. This device not only shows a high kt 2 comparable to the one attained by film-bulk-acoustic resonators, FBARs, but is also characterized by an unprecedented figure-ofmerit (FoM∽108) that, to the best of the authors' knowledge, is the highest demonstrated in AlN resonators operating at ~1 GHz.

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1.02 GHz cross-sectional Lamé mode resonator with high KT2 exceeding 4.6%

Cited by 7 publications

References 7 publications

Study of the Performance Enhancement of Sc-Doped AlN Super High Frequency Cross-Sectional Lamé Mode Resonators

Study of the Performance Enhancement of Sc-Doped AlN Super High Frequency Cross-Sectional Lamé Mode Resonators

Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications

Unprecedented Figure of Merit in Excess of 108 in 920 MHZ Aluminum Nitride Cross-Sectional Lamé Mode Resonators Showing Kt2 in Excess of 6.2%

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