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Gaman, V. I.; Kalygina, V. M.

doi:10.1023/a:1025720906154

Cited by 4 publications

(5 citation statements)

References 1 publication

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“…Subsequently, electrons escaped from Pt due to decrease in work function, which causes the flat band voltage V FB to decrease and results in parallel shift in C-V characteristics, refer Figures 3-6. 24 The effect of H 2 on flat band voltage of MOS structure can be described by the following model. 12 The change in flat band voltage of Pt gate MOS sensor upon exposure to H 2 is partially due to a change in the metal work function has been described by several researchers.…”

Section: Resultsmentioning

confidence: 99%

Influence of gridded gate structure on gas sensing behavior of hydrogen

Kumar

Sunny

Dwivedi

et al. 2014

Journal of Applied Physics

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A gridded Pt/SiO2/Si MOS sensor for hydrogen detection has been fabricated on p-type ⟨100⟩ Si wafer having resistivity (1–6 Ω cm). The SiO2 and Platinum (Pt) gate thickness were kept about 10 nm and 35 nm. The performance of Pt gate MOS sensor was evaluated through C-V characteristics (capacitance vs voltage) upon exposure to H2 (250 ppm–4000ppm) at different frequencies (25 kHz and 50 kHz) in a closed chamber at air ambient atmosphere. The capacitance of the sensor decreases with increase in frequency as well as H2 gas concentration. The flat band voltage characteristics have been evaluated at different frequencies and concentrations. It decreases as the frequency and concentration of gas both increases. The maximum flat band voltage change was observed −0.6 V at 25 kHz. The sensor exhibits better sensitivity (∼88%) at low frequency (25 kHz). The high response of sensor is attributed to the side wall diffusion, increase in surface area caused by inner side wall and increase in porosity, increase in fixed surface state density, spill-over mechanism and change in interface state density on exposure of gas along with the formation of dipole layer.

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Section: Resultsmentioning

confidence: 99%

Influence of gridded gate structure on gas sensing behavior of hydrogen

Kumar

Sunny

Dwivedi

et al. 2014

Journal of Applied Physics

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“…AUff AQ/Cd+AUc (1) In the formula (1) [2], and into SiO2-w i . t f < 1 9 -1 õ -1 5 c 2 / s 1.9 10' cm2/S.…”

Section: Resultsmentioning

confidence: 99%

“…In the paper [1], we proposed that both boundaries were involved in forming response to hydrogen of silicon Pd-SiO2-n-Si MOS-diode with tunneling thin layer of SiO2. Corresponding to the mentioned model hydrogen atoms (Ha) occurred due to dissociation of H2 molecules on the surface of Pd electrode diffuse through Pd and SiO2 layers and are adsorbed on Pd-SiO2 and SiO2-n-Si boundaries.…”

Section: Introductionmentioning

confidence: 99%

Characteristic Properties of Response of Gas Sensor Si-Based MOS-Diode to Hydrogen

Grisyk

Gaman

Baljuba

et al. 2007

2007 Siberian Conference on Control and Communications

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The main conditions of physical model of hydrogen influence on Pd-SiO2-n-Si MOS-diodes are presented. It is proposed that hydrogen atoms (Ha) occurred due to dissociation of H2 molecules on the surface of Pd electrode diffuse through Pd and SiO2 layers and are adsorbed on Pd-SiO2 and SiO2-n-Si boundaries. It has been showed that in contrast to MOS -capacitor the response to hydrogen is generated due to the processes on the both boundaries.

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“…The SCR capacity can be calculated using the where C d.tot = SC d . In the enrichment regime, С 0 also depends on Δ| U c | [17]. However, this dependence is weaker than that for the depletion regime.…”

Section: Hydrogen Sensors Based On Silicon Mos-structuresmentioning

confidence: 89%

“…For the high-depletion or weak inversion regimes of the MOS-structure, the influence of hydrogen on the SCR (С 0 ) capacity can be described as follows [17]:…”

Section: Hydrogen Sensors Based On Silicon Mos-structuresmentioning

confidence: 99%

Basic physics of semiconductor hydrogen sensors

Gaman

2008

Russ Phys J

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The most probable physical models of hydrogen sensors based on thin stannic oxide films, MOS-structures, and tunnel MOS-diodes are discussed. The emphasis is on the mechanisms of formation of sensor response to hydrogen. The analytical equations describing the dependence of the response on the hydrogen concentration n Н 2 are derived for all types of sensors. The relations describing the dependences of the SnO 2 -sensor conductivity and response on the absolute humidity of a gas mixture are given. It is shown that the relaxation time τ rel of the response of SnO 2 -and MOS-structure sensors is determined by the relaxation time τ а of hydrogen atom adsorption on the SnO 2 and SiO 2 surfaces, respectively. For the MOS-diodes, τ rel = τ а at n Н 2 <3⋅10 3 ppm and τ rel = τ d at n Н 2 ≥ 7.5⋅10 3 ppm, where τ d is the relaxation time of hydrogen atom diffusion through an SiO 2 layer.

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Untitled

Cited by 4 publications

References 1 publication

Influence of gridded gate structure on gas sensing behavior of hydrogen

Influence of gridded gate structure on gas sensing behavior of hydrogen

Characteristic Properties of Response of Gas Sensor Si-Based MOS-Diode to Hydrogen

Basic physics of semiconductor hydrogen sensors

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