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Lin, Hong Ping; Kozuka, Hiromitsu; Yoko, Toshinobu

doi:10.1023/a:1008784505272

Cited by 7 publications

(1 citation statement)

References 3 publications

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“…However, in the work [6] the authors have also shown that doping of TiO 2 with cobalt enabled the creation of semiconducting films with the hole type conductivity. Unfortunately, such well conductive and welltransparent thin films were obtained only after additional annealing of the prepared structures at a temperature of at least 300 • C in hydrogen, nitrogen or in a vacuum [4,5,9,10]. As a result, their application, for example as a transparent electrode in already existing devices, such as silicon devices, is limited.…”

Section: Introductionmentioning

confidence: 99%

Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

Mazur

Kaczmarek

Prociów

et al. 2014

Materials Science-Poland

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In this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO 2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5·10 −2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.

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Section: Introductionmentioning

confidence: 99%

Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

Mazur

Kaczmarek

Prociów

et al. 2014

Materials Science-Poland

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Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

2015

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TiO 2 -based thin films and nanomaterials have been fabricated via physical and solution-based techniques by various research groups around the globe. Generally, most applications of TiO 2 involve photocatalytic activity for water and air purification, self-cleaning surfaces, antibacterial activity, and superhydrophilicity. As a widebandgap semiconductor, modified TiO 2 belongs to a class of materials called transparent semiconducting oxides (TSOs), which are simultaneously optically transparent and electrically conductive. TSOs continue to be in high demand for a variety of applications ranging from transparent electronics and sensor devices to light detecting and emitting devices in telecommunications. However, reports on TiO 2 applications as an effective TSO for transparent electronics applications have been limited. In general, TiO 2 is intrinsically an n-type semiconductor but can be doped to have p-type semiconductivity. This provides a very important opportunity to fabricate all-transparent homojunction devices for light harvesting and energy storage. P-type TSOs have recently attracted tremendous interest in the field of active devices for emerging transparent electronics for potential use in ultra-violet light-based solar cells. Therefore, a detailed overview of the synthesis, band structure modification via doping, properties, and applications of modified TiO 2 as n-and p-type TSOs is warranted. This article comprehensively reviews the latest developments. The discussion includes solution-based wet chemical techniques and vacuum-based dry physical techniques fabricating TiO 2 -TSOs. The synthesis of p-TiO 2 in particular is discussed in detail as it may provide interesting breakthroughs in emerging transparent electronics applications. Also, the structural, optical, and electrical properties of TiO 2 are discussed in the context of TSO applications, specifically the defect chemistry of TiO 2 to obtain n-and p-type semiconductivity, which could provide interesting insights into the band structure engineering of TiO 2 for conductivity reversal. Applications of both nand p-type TiO 2 have been reviewed in detail in relation to thin film transparent homo/heterojunction devices, dyesensitized solar cells, electrochromic displays, and other energy-related applications.

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P-type transparent Ti–V oxides semiconductor thin film as a prospective material for transparent electronics

et al. 2012

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Untitled

Cited by 7 publications

References 3 publications

Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

P-type transparent Ti–V oxides semiconductor thin film as a prospective material for transparent electronics

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