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Гаджиев, Г. Г.; Исмаилов, Ш. М.; Khamidov, M. M.; Abdullaev, Kh. Kh.; Соколов, В. В.

doi:10.1023/a:1004185105712

Cited by 21 publications

(32 citation statements)

References 5 publications

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“…The latter relation is in better agreement with density values reported for HgTe [4] and CdTe [5][6][7][8] included in Figure 8.1, and can be used when the material stoichiometry is unknown. For metal-saturated samples an increment of up to 0.01 g cm −3 needs to be added, and a similar amount subtracted for tellurium-saturated material.…”

Section: Variation Of Density With Xsupporting

confidence: 85%

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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Section: Variation Of Density With Xsupporting

confidence: 85%

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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“…1) High thermoelectric performances were observed in -La 2 S 3 phase with high sulfur content. 1,2,9) The lanthanumrich sample promotes the formation of -La 2 S 3 , whose composition is nearly identical to that of La 3 S 4 .…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11] However, in order to apply these materials to thermoelectric devices for smallscale refrigeration and power generation, it is required to prepare thin films. A majority of the previous studies have been confined to the investigation of bulk materials.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of La2S3 Thin Films by Sulfurization of LaCl3 and CS(NH2)2

et al. 2006

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La 2 S 3 thin films were prepared by dipping the substrates in methanol solutions of LaCl 3 Á7H 2 O and CS(NH 2 ) 2 , followed by sulfurization with CS 2 gas in the temperature range of 773-1073 K. The effects of the substrate and the mole ratio of LaCl 3 Á7H 2 O to CS(NH 2 ) 2 on the phase formation after sulfurization were investigated. When the mole ratio of LaCl 3 Á7H 2 O to CS(NH 2 ) 2 was 2:3, the tetragonal -La 2 S 3 coatings were obtained on silica glass and Mo substrates for sulfurization at 1073 K. On the other hand, the cubic -La 2 S 3 coating was obtained on a soda-lime glass substrate for sulfurization at 973 K. The thin films on Ta and Ti substrates were comprised of -La 2 S 3 and -La 2 S 3 phases for sulfurization at 1073 K. The LaS 2 phase was identified as an intermediate product of sulfurization at about 873 K. When the mole ratio of LaCl 3 Á7H 2 O to CS(NH 2 ) 2 was 1:1, the -La 2 S 3 coating was also obtained on silica glass substrate for sulfurization at 1073 K. Since the gaseous phases formed during sulfurization pass through the La 2 S 3 layer, the thin films obtained were porous.

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“…4 The highest figure of merit ZT ͑=S 2 T / , where S is the thermopower, T the absolute temperature, the electrical resistivity, the thermal conductivity͒ has been found in the ␥ phase with high sulfur content. Wood et al 2 and Gadzhiev et al 3 have reported the ZT values of 0.5-0.6 for La 2 S 2.96 at 1000 K.…”

mentioning

confidence: 97%

“…[1][2][3] The ␥ phase crystallizes in the cubic Th 3 P 4 structure over the compositional range La 2 S 2.67 -La 2 S 3 . 4 The highest figure of merit ZT ͑=S 2 T / , where S is the thermopower, T the absolute temperature, the electrical resistivity, the thermal conductivity͒ has been found in the ␥ phase with high sulfur content.…”

mentioning

confidence: 99%

Thermoelectric properties of lanthanum sesquisulfide with Ti additive

Ohta

Hirai

Kato

et al. 2005

Applied Physics Letters

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The electrical resistivity, thermopower, and thermal conductivity have been measured for the lanthanum sesquisulfide ͑La 2 S 3 ͒ of which the crystal phase is controlled by the Ti additive. In all the samples, the thermopower is negative between 300 and 1000 K. The sample with 8 wt % Ti, which consists almost of the cubic ␥ phase, behaves as a degenerate semiconductor. The thermoelectric figure of merit ZT increases with increasing temperature, reaching a value of 0.21 at 1000 K. In contrast, the sample with 2 wt % Ti consists almost of the tetragonal ␤ phase. The transport mechanism can be well explained by the model of the Anderson localization. The ZT value increases abruptly with increasing temperature. At 1000 K, this ZT value is comparable with that of the sample with 8 wt % Ti.

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Cited by 21 publications

References 5 publications

Mechanical and Thermal Properties

Mechanical and Thermal Properties

Synthesis of La<SUB>2</SUB>S<SUB>3</SUB> Thin Films by Sulfurization of LaCl<SUB>3</SUB> and CS(NH<SUB>2</SUB>)<SUB>2</SUB>

Thermoelectric properties of lanthanum sesquisulfide with Ti additive

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