{001}-textured Pb(Zr, Ti)O3 thin films on stainless steel by pulsed laser deposition

Cardoletti, Juliette; Komissinskiy, Philipp; Bruder, Enrico; Morandi, Carl; Alff, Lambert

doi:10.1063/5.0019967

Cited by 13 publications

(5 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Initial measurements revealed a large leakage current. It was hypothesized that the origin of this leakage current was related to oxygen vacancies, as is often the case in perovskite thin films, 25,30,37 and has already been discussed as a possible origin to the peak shifts observed in the XRD scans. To validate this hypothesis, a series of heat treatments under varying oxygen pressures from 10 to 350 mbar was carried out on NaNbO 3 thin films grown on SrTiO 3 (001) under the same conditions.…”

Section: Resultsmentioning

confidence: 92%

Impact of Strain Engineering on Antiferroelectricity in NaNbO₃ Thin Films

et al. 2023

Self Cite

View full text Add to dashboard Cite

Thin films of NaNbO 3 were grown on various substrates to investigate the effect of epitaxial strain on their structural and electrical properties. Reciprocal space maps confirmed the presence of epitaxial strain from +0.8% to −1.2%. A bulk-like antipolar ground state was detected via structural characterization for NaNbO 3 thin films grown with strains ranging from a compressive strain of 0.8% to small tensile strains, up to −0.2%. For larger tensile strains on the other hand, no indication of antipolar displacements can be detected, even beyond the relaxation of the film at larger thicknesses. Electrical characterization revealed a ferroelectric hysteresis loop for thin films under a strain of +0.8% to −0.2%, while the films under larger tensile strain showed no out-of-plane polarization component. However, the films with a compressive strain of 0.8% present a saturation polarization of up to 55 μC•cm −2 , more than twice as large for films grown under conditions with small strain, which is also larger than the highest values reported for bulk materials. Our results indicate the high potential for strain engineering in antiferroelectric materials, as the antipolar ground state could be retained with compressive strain. The observed enhancement of the saturation polarization by strain allows for substantial increase of energy density of the capacitors with antiferroelectric materials.

show abstract

Section: Resultsmentioning

confidence: 92%

Impact of Strain Engineering on Antiferroelectricity in NaNbO₃ Thin Films

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…Self-oriented LNO thin films have been fabricated by methods such as pulsed laser deposition (PLD), 24), 25) sputtering, 26)-28) and chemical solution deposition (CSD). 29)-36) Among them, sputtering has a relatively wide process window for preparation of self-oriented LNO thin films.…”

Section: Introductionmentioning

confidence: 99%

Unique growth of self-oriented LaNiO<sub>3</sub> thin films prepared by a chemical solution deposition method

Ashihara,

Kawahara,

Okazaki

et al. 2024

J. Ceram. Soc. Japan

View full text Add to dashboard Cite

We investigated the relationship between the self-orientation and process conditions of self-oriented LaNiO 3 (LNO) thin films fabricated by a chemical solution deposition method. The LNO thin films were deposited on Ptcoated Si, SiO 2 /Si, glass, c-plane sapphire, and stainless-steel substrates, which have crystal structures different from that of LNO. Increasing the heating rate during the transition from 200 °C (pre-heating) to 380 °C (pyrolysis) enhanced the self-orientation of the resulting LNO thin films. The LNO thin films deposited on the various substrate materials exhibited (h00) self-oriented growth because Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films deposited on the self-oriented LNO thin films clearly adopted the (h00) preferential orientation. As a unique behavior of PZT/LNO bilayer structures, the PZT upper layer has stronger (h00) oriented growth than that of the underlying self-oriented LNO layer.

show abstract

“…These factors contribute to the development of numerous imperfections and pose challenges for the crystalline expansion and dielectric properties of thin coatings [ 61 ]. Hence, considering the practical requirements of industrial applications, it appears highly advisable to develop technology for growing efficient thin ferroelectric films on metallic substrates [ 61 , 62 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Spectroscopic Insight into Acceptor-Modified Barium Strontium Titanate Thin Films Deposited via the Sol–Gel Method

Czekaj,

Lisińska-Czekaj

2024

Materials

View full text Add to dashboard Cite

In the present paper, composite thin films of barium strontium titanate (BaxSr1−xTiO3) with an acceptor modifier (magnesium oxide—MgO) were deposited on metal substrates (stainless steel type) using the sol–gel method. The composite thin films feature BaxSr1−xTiO3 ferroelectric solid solution as the matrix and MgO linear dielectric as the reinforcement, with MgO concentrations ranging from 1 to 5 mol%. Following thermal treatment at 650 °C, the films were analyzed for their impedance response. Experimental impedance spectra were modeled using the Kohlrausch–Williams–Watts function, revealing stretching parameters (β) in the range of approximately 0.78 to 0.89 and 0.56 to 0.90 for impedance and electric modulus formalisms, respectively. Notably, films modified with 3 mol% MgO exhibited the least stretched relaxation function. Employing the electric equivalent circuit method for data analysis, the “circle fit” analysis demonstrated an increase in capacitance from 2.97 × 10−12 F to 5.78 × 10−10 F with the incorporation of 3 mol% MgO into BST-based thin films. Further analysis based on Voigt, Maxwell, and ladder circuits revealed trends in resistance and capacitance components with varying MgO contents, suggesting non-Debye-type relaxation phenomena across all tested samples.

show abstract

{001}-textured Pb(Zr, Ti)O3 thin films on stainless steel by pulsed laser deposition

Cited by 13 publications

References 28 publications

Impact of Strain Engineering on Antiferroelectricity in NaNbO₃ Thin Films

Impact of Strain Engineering on Antiferroelectricity in NaNbO₃ Thin Films

Unique growth of self-oriented LaNiO<sub>3</sub> thin films prepared by a chemical solution deposition method

Enhanced Spectroscopic Insight into Acceptor-Modified Barium Strontium Titanate Thin Films Deposited via the Sol–Gel Method

Contact Info

Product

Resources

About

{001}-textured Pb(Zr, Ti)O3 thin films on stainless steel by pulsed laser deposition

Cited by 13 publications

References 28 publications

Impact of Strain Engineering on Antiferroelectricity in NaNbO3 Thin Films

Impact of Strain Engineering on Antiferroelectricity in NaNbO3 Thin Films

Unique growth of self-oriented LaNiO<sub>3</sub> thin films prepared by a chemical solution deposition method

Enhanced Spectroscopic Insight into Acceptor-Modified Barium Strontium Titanate Thin Films Deposited via the Sol–Gel Method

Contact Info

Product

Resources

About

Impact of Strain Engineering on Antiferroelectricity in NaNbO₃ Thin Films

Impact of Strain Engineering on Antiferroelectricity in NaNbO₃ Thin Films