0.7-$\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BV_CE0 for High Speed and High Frequency Integrated Circuits

Abstract

We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T and f MAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a very high speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing a speed record. A 5.4-Vpp 100-Gb/s distributed differential selector-driver, as well as a 4.3-Vpp 64-GBd 8-pulse-amplitude-modulation (PAM) (192 Gb/s) high-speed power digital-to-analog converter (DAC) were also realized in this technology.

Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

“…The vertical structure is optimized in order to achieve balanced frequency performances for 0.7 µm emitter DHBTs with f T and f max around 400 GHz. The structure is similar to the one described in [9] except for the low doped collector region for which Si-doping level is reduced to 1.5 × 10 16 at/cm −3 to improve the breakdown voltage. The 0.5 and 0.7 µm InP DHBTs with emitter length varying from 5 to 10 µm are processed using a wet-etched triple mesa technology.…”

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

“…The high-speed 2:1 multiplexing selector [27], [28] was fabricated in III-V Lab's 0.7 µm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology, optimized for a broad data-bandwidth up to symbol rates beyond 200 GBd. The transistors used to design and fabricate the selector have characteristic gain-bandwidth-product-related frequencies f T and f max around 400 GHz, with a DC current gain around 30 [27], [28].…”

106‐GHz bandwidth InP DHBT linear driver with a 3‐V ppdiff swing at 80 GBd in PAM‐4

“…This technology has three Au‐based metallisation layers, thin film NiCr resistances and Si 3 N 4 metal‐insulator‐metal capacitors. Additional information, including the fabrication process, can be found in [3].…”

“…III–V compound semiconductor‐based transistors can provide very high cut‐off frequencies () while ensuring high breakdown voltages () to switch high powers at very high speed, as shown in [3]. Therefore, being perfect candidates for these applications.…”

“…400 GHz) while ensuring high breakdown voltages (. 4 V) to switch high powers at very high speed, as shown in [3]. Therefore, being perfect candidates for these applications.…”