0.52 V-mm ITO-based Mach-Zehnder Modulator in Silicon Photonics

Amin, Rubab; Maiti, Rishi; Carfano, Caitlin; Ma, Zhizhen; Tahersima, Mohammad H.; Lilach, Yigal; Ratnayake, Dilan; Dalir, Hamed; Sorger, Volker J.

doi:10.48550/arxiv.1809.03544

Cited by 2 publications

(2 citation statements)

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“…In contrast, hybrid or heterogeneous photonic integration solutions offer an appealing approach, when combined with an optical low-loss, yet commercially accessible large volume and low-cost CMOS fabrication technology such as Si/SiN photonics [16][17][18][19]. Other active opto-electronic materials such as transparent conductive oxides, while showing high switching performance, usually introduce relatively high optical losses [20].…”

Section: Introductionmentioning

confidence: 99%

Loss and coupling tuning via heterogeneous integration of MoS₂ layers in silicon photonics [Invited]

Maiti

Patil

Hemnani

et al. 2019

Opt. Mater. Express

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Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processing, and possibly photonic-based computing. Here, we present an experimental guide to characterize transition metal dichalcogenides (TMDs), once monolithically integrated into the Silicon photonic platform at 1.55 µm wavelength. We describe the passive tunable coupling effect of the resonator in terms of loss induced as a function of 2D material layer coverage length and thickness. Further, we demonstrate a TMD-ring based hybrid platform as a refractive index sensor where resonance shift has been mapped out as a function of flakes thickness which correlates well with our simulated data. These experimental findings on passive TMD-Si hybrid platform open up a new dimension by controlling the effective change in loss and index, which may lead to the potential application of 2D material based active on chip photonics.

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Section: Introductionmentioning

confidence: 99%

Loss and coupling tuning via heterogeneous integration of MoS₂ layers in silicon photonics [Invited]

Maiti

Patil

Hemnani

et al. 2019

Opt. Mater. Express

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“…This carrier modulation translates into either a refractive index or absorption change [12]. For this reason, ITO has been largely employed as an active material in electro-optics modulator [13][14][15][16][17][18][19][20] in integrated photonics devices and plasmonic metasurfaces [21][22][23][24], specifically displaying high performance optical electro-refractive modulation [25]. In this regard, recently, new possibilities are emerging to use ITO as an active material in sub-wavelength waveguide integrated electro-optics modulators, which showed high performances regarding extinction ratio dB/µm [7,[26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Towards integrated metatronics: a holistic approach on precise optical and electrical properties of Indium Tin Oxide

Gui

Miscuglio

et al. 2019

Sci Rep

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The class of transparent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of modern every-day life such as in touch screens of smart phones and watches, but also used as an optically transparent low electrically-resistive contract in the photovoltaics industry. More recently ITO has shown epsilon-near-zero (ENZ) behavior in the telecommunication frequency band enabling both strong index modulation and other optically-exotic applications such as metatronics. However, the ability to precisely obtain targeted electrical and optical material properties in ITO is still challenging due to complex intrinsic effects in ITO and as such no integrated metatronic platform has been demonstrated to-date. Here we deliver an extensive and accurate description process parameter of RF-sputtering, showing a holistic control of the quality of ITO thin films in the visible and particularly near-infrared spectral region. We are able to custom-engineer the ENZ point across the telecommunication band by explicitly controlling the sputtering process conditions. Exploiting this control, we design a functional sub-wavelength-scale filter based on lumped circuit-elements, towards the realization of integrated metatronic devices and circuits.

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0.52 V-mm ITO-based Mach-Zehnder Modulator in Silicon Photonics

Cited by 2 publications

References 0 publications

Loss and coupling tuning via heterogeneous integration of MoS₂ layers in silicon photonics [Invited]

Loss and coupling tuning via heterogeneous integration of MoS₂ layers in silicon photonics [Invited]

Towards integrated metatronics: a holistic approach on precise optical and electrical properties of Indium Tin Oxide

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0.52 V-mm ITO-based Mach-Zehnder Modulator in Silicon Photonics

Cited by 2 publications

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Loss and coupling tuning via heterogeneous integration of MoS2 layers in silicon photonics [Invited]

Loss and coupling tuning via heterogeneous integration of MoS2 layers in silicon photonics [Invited]

Towards integrated metatronics: a holistic approach on precise optical and electrical properties of Indium Tin Oxide

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Loss and coupling tuning via heterogeneous integration of MoS₂ layers in silicon photonics [Invited]

Loss and coupling tuning via heterogeneous integration of MoS₂ layers in silicon photonics [Invited]