0.5 V ultra-low power wideband LNA with forward body bias technique

Liu, J.; Liao, Huailin; Huang, Ru

doi:10.1049/el.2009.3150

Cited by 24 publications

(13 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…(b) Noise cancelling complementary current-reuse LNA [9]. (c) Differential CG LNA using capacitor cross-coupling and FBB [11]. (d) CG LNA using FBB [10].…”

Section: A Threshold Voltage Reductionunclassified

Short Channel Output Conductance Enhancement Through Forward Body Biasing to Realize a 0.5 V 250 0.6–4.2 GHz Current-Reuse CMOS LNA

Parvizi

Allidina²,

El-Gamal

2016

IEEE J. Solid-State Circuits

View full text Add to dashboard Cite

This work examines the use of a forward body biasing (FBB) scheme to mitigate output conductance degradation due to short channel effects in ultra-low voltage (ULV) circuits with no additional power consumption. It is shown that FBB boosts the output resistance of a transistor such that the intrinsic gain reduction due to low-supply voltages can be compensated. This technique is then used to implement a low-noise amplifier (LNA) tailored for ultra-low power (ULP) and ULV applications. The proposed LNA uses common-gate (CG) NMOS transistors as input devices in a complementary current-reuse structure. Low-power input matching is achieved by employing an active shunt-feedback architecture while the current of the feedback stage is also reused by the input transistor. Moreover, a separate FBB scheme is exploited to tune the feedback coefficient. An inductive g m-boosting technique is used to increase the bandwidth of the LNA without additional power consumption. The proposed LNA is implemented in an IBM 0.13 µm 1P8M CMOS technology and occupies 0.39 mm 2 . The measured LNA has a 14 dB gain, 4 dB minimum noise figure, IIP3 of −10 dBm, and 0.6-4.2 GHz bandwidth, while consuming only 500 µA from a 0.5 V supply. The LNA operates with supplies as low as 0.4 V while maintaining good performance. Index Terms-Current-reuse, forward body bias (FBB),inductive gm-boosting, low-noise amplifier (LNA), short channel effect mitigation, tunable active shunt-feedback, ultra-low power (ULP), ultra-low voltage (ULV). His research interests include ultra-low power IC design, MEMS-based microsystems, advanced packaging, and efficient high-volume test and calibration strategies. Mourad N. El-Gamal (S'92-M'99) received the B.Sc. (Hons.) degree from Ain-Shams University, Cairo, Egypt, in 1987, the M.Sc. degree (minor in computer science) from Vanderbilt University,

show abstract

“…(b) Noise cancelling complementary current-reuse LNA [9]. (c) Differential CG LNA using capacitor cross-coupling and FBB [11]. (d) CG LNA using FBB [10].…”

Section: A Threshold Voltage Reductionunclassified

Short Channel Output Conductance Enhancement Through Forward Body Biasing to Realize a 0.5 V 250 0.6–4.2 GHz Current-Reuse CMOS LNA

Parvizi

Allidina²,

El-Gamal

2016

IEEE J. Solid-State Circuits

View full text Add to dashboard Cite

show abstract

“…There have been several reported implementations of low power RFICs in the last few years [4][5][6][7][8][9][10][11]. Although these circuits' power consumption aren't low enough for satisfying the target of ultra-low-power RFICs, the techniques adopted by these researches to lower power still have significance for ultra-low-power RFICs.…”

Section: Introductionmentioning

confidence: 99%

“…However, the subthreshold technique induced gain and NF performances degradation [10]. Recently, current-reuse topology and forward body bias technique are used to lower power consumption for RFICs [4,[10][11]. However, few researchers concentrate on the design of ultralow-power LNA for multi-standard receivers, especially for UWB systems.…”

Section: Introductionmentioning

confidence: 99%

An Ultra-low-power Integrated RF Front-end Based on Chip Transformer for UWB system

Li¹,

Wang²,

Fu³

2016

Proceedings of the 2015 4th National Conference on Electrical, Electronics and Computer Engineering

View full text Add to dashboard Cite

Abstract. In this paper, an ultra-low-power integrated RF front-end for UWB system is proposed.It contains a single-ended low noise amplifier (LNA) and a double balanced mixer. The resistive shunt feedback topology is employed to achieve a good input impedance matching in the whole UWB band. The stacked common-source (CS) LNA is adopting current-reuse and forward body bias techniques to reduce working current and voltage considerably. A transformer network is employed between LNA and double balanced mixer, which not just helps to convert the singleended signal to differential signal, but also makes a great contribution to save the power consumption of the front-end circuit. Fabricated in the TSMC 0.18-μm RF CMOS technology, the S11 of the front-end is below -10dB in 3.1~10.6GHz. It achieves a conversion gain of 18.3~20.5dB, the double sideband (DSB) NF of 4.3~6.1dB. The IIP3 are -3.8dBm at 4.5GH. It consumes 2.4mA from a 0.8V supply voltage and occupies an active area of only 0.86*0.52 mm 2 .

show abstract

“…These portable devices require low power dissipation to maximize battery lifetime, especially handheld devices for personal communication. There have been several reported implementations of ultra-low-power RFICs in the last few years [1][2][3]. However, these circuits mainly belong to narrow band circuit and are not convenient for the present multi-standard wireless communication system.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, current-reuse topology and forward body bias technique are used to lower power consumption for RFICs [1,13,14]. However, they were always concentrated on the design of low-power LNA circuit, and hence low-power mixer circuit is not included.…”

Section: Introductionmentioning

confidence: 99%

An ultra-low-power integrated RF receiver for multi-standard wireless applications

Fu¹

2013

IETE J Res

View full text Add to dashboard Cite

In this paper, an ultra-low-power integrated RF front end for multi-standard is proposed. It contains a current-reuse low-noise amplifier (LNA) and a single-balanced mixer. The double resonances network helps to achieve a good input impedance matching in the required band and suppress out-of-band noise. The stacked common source (CS) LNA is adopting current-reuse of the two amplifier stages and re-using bleeding current of the mixer, which save working current considerably. By employing forward body bias technique, the proposed circuit can operate at a reduced supply voltage. In addition, the local oscillator (LO) signal forward body bias technique improves the transistors' switching characteristic, which optimizes noise figure (NF) and linearity performances simultaneously. Fabricated in the chartered 0.18-µm RF CMOS technology, the S11 of the front-end is below -14 dB in 935~960 MHz, below -11 dB in 1805~2483 MHz. It achieves a conversion gain of 18.6~20.8 dB, the double sideband (DSB) NF of 2.3~5.1 dB. The IIP3 are -8.2 dBm at 935 MHz and -9.8 dBm at 2100 MHz. It consumes 2.1 mA from a 1 V supply voltage and occupies an active area of only 0.61 × 0.53 mm 2 .

show abstract

0.5 V ultra-low power wideband LNA with forward body bias technique

Cited by 24 publications

References 2 publications

Short Channel Output Conductance Enhancement Through Forward Body Biasing to Realize a 0.5 V 250 0.6–4.2 GHz Current-Reuse CMOS LNA

Short Channel Output Conductance Enhancement Through Forward Body Biasing to Realize a 0.5 V 250 0.6–4.2 GHz Current-Reuse CMOS LNA

An Ultra-low-power Integrated RF Front-end Based on Chip Transformer for UWB system

An ultra-low-power integrated RF receiver for multi-standard wireless applications

Contact Info

Product

Resources

About