0.4% Electrostrain at Low Field in Lead-Free Bi-Based Relaxor Piezoceramics by La Doping

Dinh, Hinh T.; Han, Hongliang; Tran, Vu Diem Ngoc; Van, Vinh Le; Hung, Nguyen Ba; Lee, Jae‐Shin

doi:10.1007/s11664-020-08348-8

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0.4% Electrostrain at Low Field in Lead-Free Bi-Based Relaxor Piezoceramics by La Doping

Cited by 4 publications

References 62 publications

Enhanced field-induced-strain by maximizing reversible domain switching contribution via eliminating negative strain in (Na0.5Bi0.5)TiO3-based ceramics

Enhanced field-induced-strain by maximizing reversible domain switching contribution via eliminating negative strain in (Na0.5Bi0.5)TiO3-based ceramics

Influence of A-site isovalent doping on structural and electrical properties of Bi-based lead-free piezoelectric ceramics

Low driving field-induced large strain in ternary lead-free Na0.5Bi0.5TiO3-SrTiO3-ABO3 piezoceramics

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