0.34 &lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;$\text{V}_{\mathrm {T}}$ &lt;/tex-math&gt;
                  &lt;/inline-formula&gt; AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

Lee, Hyunsoo; Jung, Dong Yun; Park, Young-Rak; Na, Jeho; Jang, Hyun-Gyu; Lee, Hyoungseok; Jun, Chi‐Hyuck; Park, Junbo; Ryu, Sang-Ouk; Ko, Sang Choon; Nam, Eun Soo

doi:10.1109/led.2015.2475178

Cited by 49 publications

(23 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Metal organic chemical vapor deposition (MOCVD) was adopted to grow the base structure including the GaN bottom buffer layer, the GaN middle buffer layer, the GaN channel layer, and the AlGaN barrier layer, and the Si 3 N 4 passivation layer was then deposited using plasma-enhanced chemical vapor deposition (PECVD) [30]. The Si 3 N 4 passivation layer, AlGaN barrier layer, GaN channel layer, and GaN buffer layer were etched through inductively coupled plasma reactive ion etching (ICP RIE), using a BCl 3 /Cl 2 gas mixture [30]. The Si 3 N 4 layer was deposited on the anode region using plasma-enhanced chemical vapor deposition (PECVD) [30].…”

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

“…The Si 3 N 4 passivation layer, AlGaN barrier layer, GaN channel layer, and GaN buffer layer were etched through inductively coupled plasma reactive ion etching (ICP RIE), using a BCl 3 /Cl 2 gas mixture [30]. The Si 3 N 4 layer was deposited on the anode region using plasma-enhanced chemical vapor deposition (PECVD) [30]. ICP RIE was adopted to etch the Si 3 N 4 layer of the anode region and kept at a thickness of 20 nm for the Si 3 N 4 layer at the right and bottom side.A Ti/Al/Ni/Au ohmic metal was deposited using e-beam evaporation on the cathode, followed by rapid thermal annealing at 800 °C for 30 s in N 2 ambient [12].…”

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

See 2 more Smart Citations

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

et al. 2019

View full text Add to dashboard Cite

In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.

show abstract

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

See 1 more Smart Citation

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Recess depth is a very important parameter of SOC FESBD with recessed Schottky. Lee et al did a comprehensive study of recess depth [62]. An optimized recess depth was found in between half and full thickness of AlGaN layer.…”

Section: Fesbd Device Fabrication and Device Structure Optimizationmentioning

confidence: 99%

GaN-Based Schottky Diode

Wang¹

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

View full text Add to dashboard Cite

Schottky diode, also known as Schottky barrier diode (SBD), fabricated on GaN and related III-Nitride materials has been researched intensively and extensively for the past two decades. This chapter reviews the property of GaN material, the advantage of GaN-based SBD, and the Schottky contact to GaN including current transporation theory, Schottky material selection, contact quality and thermal stability. The chapter also discusses about the GaN lateral, quasi-vertical and vertical SBDs, and AlGaN/GaN field effect SBDs: the evolution of the epitaxial structure, processing techniques and device structure. The chapter closes with challenges ahead and gives an outlook on the future development of the GaN SBDs.

show abstract

“…[22][23][24] In this work, a novel AlGaN/GaN MIS-Gated Hybrid Anode Diode (MG-HAD) that allows flexible control of the forward turn-on voltage (V T ) is demonstrated by simply varying the recess depth at the MIS-Gated region. It features a new turn-on and current conduction mechanism.…”

Section: -21mentioning

confidence: 99%

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

Zhou

Shi

Dong

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this paper, we propose and experimentally demonstrate a novel lateral AlGaN/GaN diode on Si substrate. The diode features a recessed metal/Al 2 O 3 /III-nitride (MIS)-gated ohmic hybrid anode, in which the drive current can be well controlled by the MIS-Gate and flows between the two ohmic contacts from the anode to the cathode with substantially reduced overall on-resistance (R on ). With this unique architecture, the forward turn-on voltage (V T ) of the diode can be flexibly trimmed, which enables a record low V T of 0.2 V obtained in the proposed diode. The incorporation of high-k dielectric in the recessed gate region and the AlGaN back barrier realize significantly leakage current (I leakage ) reduction yet high breakdown voltage (BV). The BV as high as 1100 V at I leakage less than 1 μA/mm with drift length of 20 μm is achieved in the proposed diode. The unique material properties of Gallium Nitride (GaN) enable excellent figure-of-merit for power electronic devices have been of great interest to researchers and engineers for the past two decades. In the case of lateral devices, the most distinctive feature of GaNbased materials is the high 2-dimensional electron gas (2DEG) density (e.g. ∼1 × 10 13 cm −2 ) generated at the interface of AlGaN/GaN heterojunction, which features exceptional electron mobility as high as ∼2000 cm 2 /V · s at room temperature 1 due to its strong piezoelectric and spontaneous polarization effect.2 Therefore, with the help of the wide bandgap property, the electronic devices based on AlGaN/GaN heterojunction are capable of achieving high switching speed, low switching loss, low conduction loss, high breakdown voltage and high temperature operation, which are highly preferred for power electronic applications.3 For power electronics the AlGaN/GaN on Si substrate has been considered as a promising technology for next generation power devices with low-cost and high performance due to the large diameter wafer up to 8-inch 4-6 and the well developed CMOS compatible process. As a result, the mass fabrication of AlGaN/GaN power devices with the mainstream CMOS fabrication lines becomes feasible. 7,8 Besides featuring the superior power performance, AlGaN/GaN-on-Si power devices can further be monolithically integrated with conventional Si CMOS circuits suggesting the possibility of realizing single-chip compact GaN power integrated circuits (ICs).9 For power applications, most of the aforementioned efforts have been focused on the three-terminal AlGaN/GaN transistors to achieve enhancement-mode (E-mode) operation, 10-15 low leakage current yet high breakdown voltage, [16][17][18] and low current collapse. 19-21On the other hand, the two terminal power diode as an indispensable component for switching power converters also attracts broad attention recently. 22-24In this work, a novel AlGaN/GaN MIS-Gated Hybrid Anode Diode (MG-HAD) that allows flexible control of the forward turn-on voltage (V T ) is demonstrated by simply varying the recess depth at the MIS-Gated region. It features a...

show abstract

0.34 <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {T}}$ </tex-math> </inline-formula> AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

Cited by 49 publications

References 17 publications

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

GaN-Based Schottky Diode

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

Contact Info

Product

Resources

About